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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SCS210AGC17 DIODE SIC 650V 10A TO220ACFP Rohm Semiconductor	1,918	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STTH3006PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	444	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DOP3I	175°C (Max)
SCS206AGC17 DIODE SIL CARB 650V 6A TO220ACFP Rohm Semiconductor	638	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	301	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
RRD20TJ10SGC9 DIODE GEN PURP 1KV 20A TO220ACFP Rohm Semiconductor	219	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	20A	1.05 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	-	-	Through Hole	TO-220ACFP	150°C
IDH08SG60CXKSA2 DIODE SIL CARB 600V 8A TO220-2-1 Infineon Technologies	1,662	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	8A	2.1 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
FFSP2065B-F085 DIODE SIL CARB 650V 20A TO220-2 onsemi	660	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
FFSD2065B DIODE SIL CARB 650V 23.4A DPAK onsemi	1,771	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23.4A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
IDK10G120C5XTMA1 DIODE SIC 1.2KV 31.9A TO263-1 Infineon Technologies	835	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	31.9A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	525pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
IDW12G65C5XKSA1 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	268	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
IDH12G65C5XKSA2 DIODE SIL CARB 650V 12A TO220-1 Infineon Technologies	850	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
STPSC15H12D DIODE SIL CARB 1.2KV 15A TO220AC STMicroelectronics	2,768	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
1N5806E3 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	123	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
APT60D100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	839	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	280 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
STBR6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	516	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
STTH6012WL DIODE GP 1.2KV 60A DO247 LL STMicroelectronics	946	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	-	-	Through Hole	DO-247 LL	175°C
STBR6012WY DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	112	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STBR6008WY DIODE GEN PURP 800V 60A DO247 STMicroelectronics	510	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	800 V	60A	1.1 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
IDD10SG60CXTMA2 DIODE SIL CARB 600V 10A TO252-3 Infineon Technologies	217	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
1N5806USE3 DIODE GEN PURP 150V 1A D-5A Microchip Technology	148	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	150 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C

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