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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC10H12WL DIODE SIL CARB 1.2KV 10A DO247 STMicroelectronics	244	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
CDLL5819 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	144	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-65°C ~ 125°C
STPSC10H12DY DIODE SIL CARB 1.2KV 10A TO220AC STMicroelectronics	125	RFQ	Datasheet	ECOPACK®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
1N5617US DIODE GEN PURP 400V 1A D-5A Microchip Technology	608	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
SCS210AJTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	1,249	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
STTH6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics	4,917	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
FFSP10120A DIODE SIL CARB 1.2KV 10A TO220L onsemi	689	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
JANTX1N5804 DIODE GEN PURP 100V 1A AXIAL Microchip Technology	148	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
1N5711-1 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	836	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
SCS205KGC17 DIODE SIC 1.2KV 5A TO220ACFP Rohm Semiconductor	740	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	270pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STPSC20065D DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	975	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
IDH16G65C5XKSA2 DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies	1,984	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N5553 DIODE GEN PURP 800V 3A AXIAL Microchip Technology	251	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
FFSD10120A DIODE SIL CARBIDE 1.2KV TO252AA onsemi	1,706	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-252AA	-
1N5551US DIODE GEN PURP 400V 3A D-5B Microchip Technology	165	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C
IDH12SG60CXKSA2 DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies	396	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
STPSC20065DI DIODE SIC 650V 20A TO220AC INS STMicroelectronics	599	RFQ	Datasheet	ECOPACK®2	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
MSC030SDA070B DIODE SIL CARBIDE 700V 60A TO247 Microchip Technology	118	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	60A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	1200pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
FFSP3065B DIODE SIL CARB 650V 30A TO220-2 onsemi	1,216	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDH16G120C5XKSA1 DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies	243	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	16A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C

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