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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDK16G120C5XTMA1 DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies	437	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	40A	1.95 V @ 16 A	No Recovery Time > 500mA (Io)	-	80 µA @ 1200 V	730pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
SCS215AJTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	3,996	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
STPSC20065DY DIODE SIL CARB 650V 20A TO220AC STMicroelectronics	498	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 600 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFSH3065B-F085 DIODE SIL CARB 650V 37A TO247-2 onsemi	466	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1260pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC15H12G2Y-TR DIODE SIL CARB 1.2KV 15A D2PAK STMicroelectronics	931	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
UJ3D1220KSD DIODE SIL CARB 1.2KV 10A TO247-3 Qorvo	1,188	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	220 µA @ 1200 V	1020pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
1N3595US DIODE GEN PURP 4A B SQ-MELF Microchip Technology	158	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	-	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	1 nA @ 125 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 150°C
CDLL5711 DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	265	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Schottky	50 V	33mA	410 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
SCS320AJTLL DIODE SIL CARBIDE 650V 20A LPTL Rohm Semiconductor	612	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
1N5416US DIODE GEN PURP 100V 3A D-5B Microchip Technology	111	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C
MSC030SDA120B DIODE SIL CARB 1.2KV 30A TO247 Microchip Technology	1,046	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-
MSC020SDA120S DIODE SIL CARB 1.2KV 49A D3PAK Microchip Technology	869	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	49A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1130pF @ 1V, 1MHz	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
STPSC40065CWY DIODE SIL CARB 650V 20A TO247-3 STMicroelectronics	207	RFQ	Datasheet	ECOPACK®2	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-40°C ~ 175°C
JANTX1N5190 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	189	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	2 µA @ 600 V	-	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-
IDW40G65C5BXKSA2 DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies	240	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	210 µA @ 650 V	590pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
MSC050SDA070BCT DIODE SIL CARB 700V 88A TO247-3 Microchip Technology	274	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	88A	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	2034pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
UES1306HR2/TR DIODE GEN PURP 400V 5A B AXIAL Microchip Technology	193	RFQ	-	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 400 V	-	-	-	Through Hole	B, Axial	-
NSVBAS116LT3G DIODE GEN PURP 75V 200MA SOT23-3 onsemi	11,537	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Standard	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	-	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	-55°C ~ 150°C
NSVBAS20LT3G DIODE GP 200V 200MA SOT23-3 onsemi	8,550	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Standard	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 150 V	-	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	-55°C ~ 150°C
BAY72TR DIODE GEN PURP 125V 200MA DO35 onsemi	7,740	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	125 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-35	175°C (Max)

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