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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH61W04SW DIODE GEN PURP 400V 60A TO247 STMicroelectronics	270	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	400 V	60A	1.35 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	20 µA @ 400 V	-	-	-	Through Hole	TO-247	175°C (Max)
IDDD08G65C6XTMA1 DIODE SIL CARB 650V 24A HDSOP-10 Infineon Technologies	1,875	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	24A	-	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
STPSC10065D DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	538	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10065DLF DIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics	2,074	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
UJ3D06520TS DIODE SIL CARB 650V 20A TO220-2 Qorvo	6,004	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	654pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC5H12D DIODE SIL CARB 1.2KV 5A TO220AC STMicroelectronics	2,772	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	450pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STTH31AC06SWL DIODE GEN PURP 600V 30A TO247 STMicroelectronics	187	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247	-40°C ~ 175°C
RURG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	194	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC10065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,016	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10H065G-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	516	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,206	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
MSC010SDA120K DIODE SIL CARB 1.2KV 10A TO220 Microchip Technology	178	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
IDH08G120C5XKSA1 DIODE SIL CARB 1.2KV TO220-1 Infineon Technologies	285	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	22.8A	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
STPSC10H065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,278	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
CD5819 DIODE SCHOTTKY 40V 1A DIE Microchip Technology	392	RFQ	Datasheet	-	Die	Bulk	Active	Schottky	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
STTH60RQ06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	313	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	60A	-	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	80 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
SCS206AJTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,842	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS306AJTLL DIODE SIL CARBIDE 650V 6A LPTL Rohm Semiconductor	2,023	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
MSC010SDA120B DIODE SIL CARB 1.2KV 10A TO247 Microchip Technology	1,511	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-
JAN1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	152	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C

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