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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDH02G120C5XKSA1 DIODE SIL CARB 1.2KV 2A TO220-1 Infineon Technologies	1,781	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	182pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	175°C (Max)
IDW30E65D1FKSA1 DIODE GP 650V 60A TO247-3-1 Infineon Technologies	259	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	60A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
STTH30R04G DIODE GEN PURP 400V 30A D2PAK STMicroelectronics	173	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	400 V	30A	1.45 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 400 V	-	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
D8025LTP DIODE GP 800V 15.9A TO220AB-L Littelfuse Inc.	2,392	RFQ	Datasheet	-	TO-220-3 Isolated Tab	Tube	Active	Standard	800 V	15.9A	-	Standard Recovery >500ns, > 200mA (Io)	4 µs	20 µA @ 800 V	-	-	-	Through Hole	TO-220AB-L	-40°C ~ 125°C
APT15D100BG DIODE GEN PURP 1KV 15A TO247 Microchip Technology	283	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	15A	2.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	260 ns	250 µA @ 1000 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
D4015LTP DIODE GP 400V 9.5A TO220 Littelfuse Inc.	482	RFQ	Datasheet	-	TO-220-3 Isolated Tab	Tube	Active	Standard	400 V	9.5A	1.6 V @ 9.5 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 400 V	-	-	-	Through Hole	TO-220 Isolated Tab	-40°C ~ 125°C
STTH30RQ06G2Y-TR DIODE GEN PURP 600V 30A D2PAK HV STMicroelectronics	3,200	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
RFUH20TB3SNZC9 DIODE GEN PURP 350V 20A TO220NFM Rohm Semiconductor	913	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	350 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 nA @ 350 V	-	-	-	Through Hole	TO-220NFM	150°C
ISL9R1560P2-F085 DIODE GEN PURP 600V 15A TO220-2 onsemi	633	RFQ	Datasheet	Stealth™	TO-220-2	Tube	Active	Avalanche	600 V	15A	2.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
RBQ30NS45BFHTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	995	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	30A	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	Automotive	AEC-Q101	Surface Mount	LPDS	150°C (Max)
FFSD0665B DIODE SIL CARB 650V 9.1A DPAK onsemi	854	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	9.1A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
UJ3D1205TS DIODE SIL CARB 1.2KV 5A TO220-2 Qorvo	27,393	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 1200 V	250pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC4H065D DIODE SIL CARB 650V 4A TO220AC STMicroelectronics	448	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	200pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STTH30RQ06W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	332	RFQ	Datasheet	ECOPACK®	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
SCS208AGC17 DIODE SIL CARB 650V 8A TO220ACFP Rohm Semiconductor	901	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
APT30D40BG DIODE GP 400V 30A TO247 Microchip Technology	345	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	400 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	32 ns	250 µA @ 400 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
STTH3006W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	1,882	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
STPS20M100ST DIODE SCHOTTKY 100V 20A TO220 STMicroelectronics	679	RFQ	Datasheet	-	TO-220-3	Tube	Active	Schottky	100 V	20A	850 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 100 V	-	-	-	Through Hole	TO-220	150°C (Max)
UPS840/TR13 DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology	1,835	RFQ	Datasheet	-	Powermite®3	Tape & Reel (TR)	Active	Schottky	40 V	8A	450 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 40 V	-	-	-	Surface Mount	Powermite 3	-55°C ~ 125°C
FFSD0665B-F085 DIODE SIL CARB 650V 9.1A DPAK onsemi	1,948	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	9.1A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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