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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC2H065B-TR DIODE SIL CARBIDE 650V 2A DPAK STMicroelectronics	4,630	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	2A	1.55 V @ 2 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	135pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
STTH25M06FP DIODE GP 600V 25A TO220FPAC STMicroelectronics	721	RFQ	Datasheet	ECOPACK®2	TO-220-2 Full Pack	Tube	Active	Standard	600 V	25A	3.4 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-220FPAC	175°C (Max)
STTH15R06D DIODE GEN PURP 600V 15A TO220AC STMicroelectronics	922	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	15A	2.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	60 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
IDP30E65D1XKSA1 DIODE GP 650V 60A TO220-2-1 Infineon Technologies	645	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	650 V	60A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	64 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO220-2-1	-40°C ~ 175°C
STPSC8H065DI DIODE SIC 650V 8A TO220AC INS STMicroelectronics	793	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 650 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
RFUH25NS3STL DIODE GEN PURP 350V 20A LPDS Rohm Semiconductor	2,121	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	20A	1.45 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	-	-	Surface Mount	LPDS	150°C
APT40DQ120BG DIODE GP 1.2KV 40A TO247 Microchip Technology	251	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	40A	3.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
RFV15TG6SGC9 DIODE GP 600V 15A TO220ACFP Rohm Semiconductor	1,228	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	15A	2.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	150°C (Max)
IDV30E65D2XKSA1 DIODE GP 650V 30A TO220-2FP Infineon Technologies	508	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	650 V	30A	2.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO220-2 Full Pack	-40°C ~ 175°C
IDP40E65D2XKSA1 DIODE GEN PURP 650V 40A TO220-2 Infineon Technologies	263	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	650 V	40A	2.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	40 µA @ 650 V	-	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
RB088RSM15STFTL1 150V 10A, TO-277GE, ULTRA LOW IR Rohm Semiconductor	3,700	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	150 V	10A	880 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5 µA @ 150 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
APT60DQ100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	244	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	60A	3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	255 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
STTH30RQ06GY-TR DIODE GEN PURP 600V 30A D2PAK STMicroelectronics	15,938	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
RF1501TF3SFHC9 DIODE GEN PURP 300V 20A TO220NFM Rohm Semiconductor	1,336	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	300 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 300 V	-	Automotive	AEC-Q101	Through Hole	TO-220NFM	150°C (Max)
UJ3D06510TS DIODE SIL CARB 650V 10A TO220-2 Qorvo	11,657	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	327pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
APT40DQ100BG DIODE GEN PURP 1KV 40A TO247 Microchip Technology	392	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	40A	3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
D4020LTP DIODE GP 400V 12.7A TO220AB-L Littelfuse Inc.	951	RFQ	Datasheet	-	TO-220-3 Isolated Tab	Tube	Active	Standard	400 V	12.7A	-	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 400 V	-	-	-	Through Hole	TO-220AB-L	-40°C ~ 125°C
1N649-1/TR DIODE GEN PURP 600V 400MA DO35 Microchip Technology	206	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	600 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 600 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
STPSC4H065B-TR DIODE SIL CARBIDE 650V 4A DPAK STMicroelectronics	3,101	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	200pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
STTH1512G-TR DIODE GEN PURP 1.2KV 15A D2PAK STMicroelectronics	4,553	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	15 µA @ 1200 V	-	-	-	Surface Mount	D2PAK	175°C (Max)

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