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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDK02G120C5XTMA1 DIODE SIC 1.2KV 11.8A TO263-1 Infineon Technologies	688	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	11.8A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	182pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
STBR3008G2Y-TR DIODE GEN PURP 800V 30A D2PAK HV STMicroelectronics	422	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	800 V	30A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 800 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
IDW40E65D1FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	110	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	80A	1.7 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	129 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
STBR3012W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	1,666	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
JANTX1N3595-1 DIODE GEN PURP 125V 150MA DO35 Microchip Technology	174	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Military	MIL-S-19500-241	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
IDH06G65C5XKSA2 DIODE SIL CARB 650V 6A TO220-2-1 Infineon Technologies	1,287	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
1N4245 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	264	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
STPSC6H065DLF DIODE SIL CARB 650V 6A POWERFLAT STMicroelectronics	10,686	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	350pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
STTH1512W DIODE GEN PURP 1.2KV 15A DO247 STMicroelectronics	380	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	15 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
STTH30R06PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	2,646	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DOP3I	175°C (Max)
STTH3012WL DIODE GP 1.2KV 30A DO247 LL STMicroelectronics	569	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	2.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1200 V	-	-	-	Through Hole	DO-247 LL	175°C
MSC010SDA070B DIODE SIL CARBIDE 700V 24A TO247 Microchip Technology	122	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	24A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	353pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
IDW40E65D2FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	2,289	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	80A	2.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
STPSC8H065B-TR DIODE SIL CARBIDE 650V 8A DPAK STMicroelectronics	13,754	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
IDW75E60FKSA1 DIODE GP 600V 120A TO247-3-1 Infineon Technologies	454	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	120A	2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	121 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
DUR30120 DIODE GEN PURP 1.2KV 30A TO220AB Littelfuse Inc.	884	RFQ	Datasheet	DUR	TO-220-3	Tube	Active	Standard	1200 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
STPSC6H065DI DIODE SIC 650V 6A TO220AC INS STMicroelectronics	800	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 650 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
STBR3012WY DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	146	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STTH30L06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	374	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STTH3012W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	720	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	2.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)

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