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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDH10S120AKSA1 DIODE SIL CARB 1.2KV 10A TO220-2 Infineon Technologies	9,194	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
FFSH10120A DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	277	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	17A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH2065A DIODE SIL CARB 650V 25A TO247-2 onsemi	260	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	25A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
JANTXV1N6642US DIODE GEN PURP 100V 300MA D-5B Microchip Technology	108	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 100 V	-	Military	MIL-PRF-19500/578	Surface Mount	D-5B	-65°C ~ 175°C
IDW30G65C5FKSA1 DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies	7,764	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	1.1 mA @ 650 V	860pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
FFSH10120A-F155 DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	180	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	17A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SCS315AHGC9 DIODE SIL CARB 650V 15A TO220ACP Rohm Semiconductor	376	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	-	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
FFSH2065ADN-F155 DIODE SIL CARB 650V 13A TO247-3 onsemi	632	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	13A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
NDSH20120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	415	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1480pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
LSIC2SD065A16A DIODE SIL CARB 650V 38A TO220-2L Littelfuse Inc.	842	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	38A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SCS210KGC DIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor	156	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
AIDW30S65C5XKSA1 DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies	24	RFQ	Datasheet	CoolSiC™	TO-247-3	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	860pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
STPSC15H12DY DIODE SIL CARB 1.2KV 15A TO220AC STMicroelectronics	990	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
IDW15S120FKSA1 DIODE SIL CARB 1.2KV 15A TO247-3 Infineon Technologies	9,240	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	305 µA @ 1200 V	870pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
SCS320AHGC9 DIODE SIL CARB 650V 20A TO220ACP Rohm Semiconductor	2,710	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
STPSC20H12G2-TR DIODE SIL CARB 1.2KV 20A D2PAK STMicroelectronics	1,000	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1650pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
FFSH15120A DIODE SIL CARB 1.2KV 26A TO247-2 onsemi	229	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH3065ADN-F155 DIODE SIL CARB 650V 23A TO247-3 onsemi	447	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
LSIC2SD065A20A DIODE SIL CARB 650V 45A TO220-2L Littelfuse Inc.	873	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	45A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	960pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
NDSH30120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	38A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1961pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C

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