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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RFUS20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	259	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	-	-	Surface Mount	LPDS	150°C (Max)
RBQ30NS45BTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	706	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	30A	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	-	-	Surface Mount	LPDS	150°C
MUR3040 DIODE GEN PURP 400V 15A TO218 onsemi	7,505	RFQ	Datasheet	-	TO-218-2	Bulk	Active	Standard	400 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	35 µA @ 400 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-218	-65°C ~ 175°C
SDT05S60 DIODE SIL CARB 600V 5A TO220-2 Infineon Technologies	2,481	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	170pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
STTH806D DIODE GEN PURP 600V 8A TO220AC STMicroelectronics	3,924	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	600 V	8A	1.85 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	8 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
IDK12G65C5XTMA1 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	9,817	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	2.1 mA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
NRVB120ESFT1G DIODE SCHOTTKY 20V 1A SOD123FL onsemi	7,643	RFQ	Datasheet	-	SOD-123F	Tape & Reel (TR)	Obsolete	Schottky	20 V	1A	530 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 20 V	-	-	-	Surface Mount	SOD-123FL	-65°C ~ 150°C
NRVBB4030T4G DIODE SCHOTTKY 30V 40A D2PAK onsemi	6,765	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	30 V	40A	550 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 30 V	-	-	-	Surface Mount	D2PAK	-65°C ~ 175°C
FFSD0465A DIODE SIL CARB 650V 7.6A DPAK onsemi	2,442	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
APT30D60SG DIODE GEN PURP 600V 30A D3 Microchip Technology	168	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
APT60DQ60SG DIODE GEN PURP 60A D3PAK Microchip Technology	122	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	-	60A	2.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	25 µA @ 600 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
SCS310AHGC9 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	361	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
IDT10S60C DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	1,479	RFQ	Datasheet	thinQ!™	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
FFSH1665A DIODE SIL CARB 650V 23A TO247-2 onsemi	8,896	RFQ	Datasheet	-	TO-247-2	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 150°C
FFSP0465A DIODE SIL CARB 650V 8.6A TO220-2 onsemi	792	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDH10S60CAKSA1 DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	6,184	RFQ	Datasheet	CoolSiC™+	TO-220-2	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
FFSB0465A DIODE SIL CARB 650V 7.7A D2PAK-2 onsemi	770	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	7.7A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
MBRB2515LT4G DIODE SCHOTTKY 15V 25A D2PAK onsemi	214	RFQ	Datasheet	SWITCHMODE™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	15 V	25A	450 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 mA @ 15 V	-	-	-	Surface Mount	D2PAK	100°C (Max)
STPSC6H12B-TR1 DIODE SIL CARBIDE 1.2KV 6A DPAK STMicroelectronics	7,403	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	6A	1.9 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	330pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
FFSPF0665A DIODE SIC 650V 6A TO220F-2FS onsemi	898	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C

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