Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PX8746JDNG029XTMA1

PX8746JDNG029XTMA1

LED PX8746JDNG029XTMA1

Infineon Technologies

8,384
RFQ
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
SCS308APC9

SCS308APC9

DIODE SILICON CARBIDE 650V 8A

Rohm Semiconductor

125
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 400pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
FFSM0865A

FFSM0865A

DIODE SIL CARB 650V 9.6A 4PQFN

onsemi

3,000
RFQ
Datasheet - 4-PowerTSFN Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 9.6A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
LSIC2SD065A08A

LSIC2SD065A08A

DIODE SIL CARB 650V 23A TO220-2L

Littelfuse Inc.

1,021
RFQ
Datasheet Gen2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 415pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
FFSB1265A

FFSB1265A

DIODE SIL CARB 650V 14A D2PAK-3

onsemi

670
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 14A 1.75 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 665pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -65°C ~ 175°C
PCFF75H60F

PCFF75H60F

RECTIFIER WAFER DIE

onsemi

2,240
RFQ

-

- - Tray Active - - - - - - - - - - - - -
NDSH10120C-F155

NDSH10120C-F155

SIC DIODE GEN2.0 1200V TO247-2L

onsemi

450
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 12A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 680pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
1N6643US

1N6643US

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

129
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 50 nA @ 50 V 5pF @ 0V, 1MHz - - Surface Mount D-5B -65°C ~ 175°C
64432119AA

64432119AA

LEAD SET IAP MAP SMAP 1SX & 1DX

Vishay

303
RFQ

-

- - Box Active - - - - - - - - - - - - -
LFUSCD10120A

LFUSCD10120A

DIODE SIL CARB 1.2KV 10A TO220AC

Littelfuse Inc.

500
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 500pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
LSIC2SD120E15CC

LSIC2SD120E15CC

DIODE SIC 1.2KV 24.5A TO247AD

Littelfuse Inc.

450
RFQ
Datasheet Gen2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 24.5A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 454pF @ 1V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
SCS210AGHRC

SCS210AGHRC

DIODE SIL CARB 650V 10A TO220AC

Rohm Semiconductor

792
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
SCS310AMC

SCS310AMC

DIODE SIL CARB 650V 10A TO220FM

Rohm Semiconductor

215
RFQ
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
IDW10S120FKSA1

IDW10S120FKSA1

DIODE SIL CARB 1.2KV 10A TO247-3

Infineon Technologies

4,069
RFQ
Datasheet CoolSiC™+ TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 1200 V 580pF @ 1V, 1MHz - - Through Hole PG-TO247-3-41 -55°C ~ 175°C
FFSPF2065A

FFSPF2065A

DIODE SIC 650V 20A TO220F-2FS

onsemi

1,284
RFQ
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 1085pF @ 1V, 100kHz - - Through Hole TO-220F-2FS -55°C ~ 175°C
LSIC2SD065A10A

LSIC2SD065A10A

DIODE SIL CARB 650V 27A TO220-2L

Littelfuse Inc.

1,006
RFQ
Datasheet Gen2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 27A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
FFSH3065A

FFSH3065A

DIODE SIL CARB 650V 26A TO247-2

onsemi

2,045
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 26A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 1705pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
LSIC2SD065D16A

LSIC2SD065D16A

DIODE SIL CARBIDE 650V 38A TO263

Littelfuse Inc.

819
RFQ
Datasheet GEN2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 38A 1.8 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 730pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
SCS212AGHRC

SCS212AGHRC

DIODE SIL CARB 650V 12A TO220AC

Rohm Semiconductor

1,778
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.55 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 438pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
LSIC2SD065E12CCA

LSIC2SD065E12CCA

DIODE SIC 650V 18.5A TO247AD

Littelfuse Inc.

500
RFQ
Datasheet GEN2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 18.5A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 300pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
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