Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDB06S60CATMA2

IDB06S60CATMA2

DIODE SIL CARB 600V 6A TO263-3-2

Infineon Technologies

6,183
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 600 V 280pF @ 1V, 1MHz - - Surface Mount PG-TO263-3-2 -
IDK09G65C5XTMA1

IDK09G65C5XTMA1

DIODE SIL CARB 650V 9A TO263-2

Infineon Technologies

7,212
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 9A 1.8 V @ 9 A No Recovery Time > 500mA (Io) 0 ns 1.6 mA @ 650 V 270pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
SDT05S60XK

SDT05S60XK

DIODE SIL CARB 600V 5A TO220-2

Infineon Technologies

700
RFQ
Datasheet - TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 600 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 170pF @ 1V, 1MHz - - Through Hole PG-TO220-2 -55°C ~ 175°C
MURD530T4G

MURD530T4G

DIODE GEN PURP 300V 5A DPAK

onsemi

2,556
RFQ
Datasheet SWITCHMODE™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Standard 300 V 5A 1.05 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V - - - Surface Mount DPAK -55°C ~ 175°C
RF1501NS3STL

RF1501NS3STL

DIODE GEN PURP 300V 20A LPDS

Rohm Semiconductor

1,023
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 300 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 300 V - - - Surface Mount LPDS 150°C (Max)
IDDD04G65C6XTMA1

IDDD04G65C6XTMA1

DIODE SIL CARB 650V 13A HDSOP-10

Infineon Technologies

7,511
RFQ
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Last Time Buy SiC (Silicon Carbide) Schottky 650 V 13A - No Recovery Time > 500mA (Io) 0 ns 14 µA @ 420 V 205pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
STPS5H100H

STPS5H100H

DIODE SCHOTTKY 100V 5A TO251

STMicroelectronics

1,832
RFQ
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete Schottky 100 V 5A 730 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 3.5 µA @ 100 V - - - Through Hole TO-251 (IPAK) 175°C (Max)
SCS304AHGC9

SCS304AHGC9

DIODE SIL CARB 650V 4A TO220ACP

Rohm Semiconductor

681
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 200pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
STPSC16H065AW

STPSC16H065AW

DIODE SIL CARB 650V 16A TO247-3

STMicroelectronics

120
RFQ
Datasheet ECOPACK®2 TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.75 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 650 V 750pF @ 0V, 1MHz - - Through Hole TO-247-3 -40°C ~ 175°C
RFX10TF6S

RFX10TF6S

DIODE GEN PURP 600V 10A TO220NFM

Rohm Semiconductor

936
RFQ

-

- TO-220-2 Full Pack Tube Not For New Designs Standard 600 V 10A 2.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - - - Through Hole TO-220NFM 150°C (Max)
RJU6053TDPP-EJ#T2

RJU6053TDPP-EJ#T2

DIODE GP 600V 20A TO220FP-2L

Renesas Electronics Corporation

80,748
RFQ
Datasheet - TO-220-2 Full Pack Bulk Active Standard 600 V 20A 3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 600 V - - - Through Hole TO-220FP-2L 150°C (Max)
D4015L56TP

D4015L56TP

DIODE GP 400V 9.5A ITO220AB

Littelfuse Inc.

21,998
RFQ
Datasheet Teccor® TO-220-3 Isolated Tab Tube Active Standard 400 V 9.5A 1.6 V @ 9.5 A Standard Recovery >500ns, > 200mA (Io) 4 µs 10 µA @ 400 V - - - Through Hole ITO-220AB -40°C ~ 125°C
PCFF60UP60F

PCFF60UP60F

DIODE ULTRAFAST

onsemi

5,918
RFQ

-

* - Bulk Obsolete - - - - - - - - - - - - -
ISL9R3060P2

ISL9R3060P2

DIODE GEN PURP 600V 30A TO220-2

onsemi

5,056
RFQ
Datasheet Stealth™ TO-220-2 Bulk Obsolete Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - - - Through Hole TO-220-2 -55°C ~ 175°C
RJU6054SDPK-M0#T0

RJU6054SDPK-M0#T0

RECTIFIER DIODE, 30A, 600V

Renesas Electronics Corporation

3,330
RFQ
Datasheet * - Bulk Active - - - - - - - - - - - - -
RJU6054WDPK-M0#T0

RJU6054WDPK-M0#T0

RECTIFIER DIODE

Renesas Electronics Corporation

1,208
RFQ
Datasheet * - Bulk Active - - - - - - - - - - - - -
MBR1660

MBR1660

DIODE SCHOTTKY 60V 16A TO220-2

onsemi

533
RFQ
Datasheet - TO-220-2 Tube Obsolete Schottky 60 V 16A 750 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V - - - Through Hole TO-220-2 -65°C ~ 150°C
STPSC6H065BY-TR

STPSC6H065BY-TR

DIODE SIL CARBIDE 650V 6A DPAK

STMicroelectronics

7,471
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A - No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount DPAK -40°C ~ 175°C
IDK10G65C5XTMA1

IDK10G65C5XTMA1

DIODE SIL CARB 650V 10A TO263-2

Infineon Technologies

5,530
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 1.7 mA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
SCS304APC9

SCS304APC9

DIODE SILICON CARBIDE 650V 4A

Rohm Semiconductor

862
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 200pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
Total 14609 Record«Prev1... 219220221222223224225226...731Next»