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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSD0865A DIODE SIL CARBIDE 650V 15A DPAK onsemi	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
1N486B DIODE GEN PURP 250V 200MA DO35 onsemi	14,945	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	250 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	50 nA @ 225 V	-	-	-	Through Hole	DO-204AH (DO-35)	175°C
STPSC10H065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,108	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
PX8244HDMG008XTMA1 LED PX8244HDMG008XTMA1 Infineon Technologies	8,000	RFQ	Datasheet	-	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
STPSC10C065RY DIODE SIL CARBIDE 650V 10A I2PAK STMicroelectronics	972	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	I2PAK	-40°C ~ 175°C
RHRG5060 DIODE GEN PURP 600V 50A TO247-2 onsemi	1,778	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
STPSC12C065DY DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	154	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	530pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFSPF0865A DIODE SIC 650V 8A TO220F-2FS onsemi	915	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
LSIC2SD065A06A DIODE SIL CARB 650V 18.5A TO220L Littelfuse Inc.	758	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
IDDD12G65C6XTMA1 DIODE SIL CARB 650V 34A HDSOP-10 Infineon Technologies	2,234	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	34A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 420 V	594pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
UJ3D06520KSD DIODE SIL CARB 650V 10A TO247-3 Qorvo	9,218	RFQ	Datasheet	Gen-III	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	654pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
STTH30S06W DIODE GEN PURP 600V 30A DO247-2 STMicroelectronics	521	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Obsolete	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-	-	-	Through Hole	-	-40°C ~ 175°C
SDT08S60 DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies	6,617	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	280pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
FFSPF1065A DIODE SIC 650V 10A TO220F-2FS onsemi	930	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
STPSC1006D DIODE SIL CARB 600V 10A TO220AC STMicroelectronics	166	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC12H065DY DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	219	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFH75H60S DIODE GEN PURP 600V 75A TO247-2 onsemi	1,196	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	75A	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
UJ3D1210KSD DIODE SIL CARB 1.2KV 5A TO247-3 Qorvo	528	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
PCFFS4065AF DIODE SIL CARBIDE 650V 40A DIE onsemi	1,364	RFQ	-	-	Die	Tray	Obsolete	SiC (Silicon Carbide) Schottky	650 V	40A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pf @ 1V, 100kHz	-	-	Surface Mount	Die	-55°C ~ 175°C
LSIC2SD065C08A DIODE SIL CARB 650V 23A TO252 Littelfuse Inc.	2,288	RFQ	Datasheet	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	415pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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