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Single Diodes
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVDSH20120CDIODE SIL CARB 1.2KV 26A TO247-2 |
447 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1480pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
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STPSC20G12WLYAUTOMOTIVE 1200 V, 20A POWER SCH |
170 |
|
Datasheet | ECOPACK®2 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 LL | -55°C ~ 175°C |
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IDWD10G200C5XKSA1SIC DISCRETE |
240 |
|
Datasheet | CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 35A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 2 kV | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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SCS220KNHRTRL1200V 20A SMD SILICON CARBIDE |
500 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1050pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
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IDW32G65C5BXKSA2DIODE SIL CARB 650V 16A TO247-3 |
230 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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|
STPSC30G12WL1200 V, 20 A HIGH SURGE SILICON |
166 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N5822SCHOTTKY DO201 40V 3A 150C |
131 |
|
Datasheet | - | B, Axial | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Through Hole | B, Axial | -65°C ~ 125°C |
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STPSC40G12WL1200 V, 20 A HIGH SURGE SILICON |
200 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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STPSC30G12WLYAUTOMOTIVE 1200 V, 30 A SILICON |
115 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 225 µA @ 1200 V | 2272pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-247 LL | -55°C ~ 175°C |
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STPSC40G12WLYAUTOMOTIVE 1200 V, 40A POWER SCH |
200 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IDWD25G200C5XKSA1SIC DISCRETE |
240 |
|
Datasheet | CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 77A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 375 µA @ 2 kV | 2850pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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NDSH50120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
439 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 53A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 3691pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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IDWD40G200C5XKSA1SIC DISCRETE |
240 |
|
Datasheet | CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 114A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 2 kV | 4550pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDWD50G200C5XKSA1SIC DISCRETE |
240 |
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Datasheet | CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 140A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 750 µA @ 2 kV | 5700pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDYH80G200C5XKSA1SIC DISCRETE |
240 |
|
- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 157A | 1.75 V @ 80 A | - | - | 1.2 A @ 2000 V | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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IDWD80G200C5XKSA1SIC DISCRETE |
240 |
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Datasheet | CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 214A | 1.75 V @ 80 A | No Recovery Time > 500mA (Io) | 0 ns | 1.2 mA @ 2 kV | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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JANTX1N3891DIODE GEN PURP 200V 12A DO203AA |
96 |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 12A | 1.5 V @ 38 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 10 µA @ 200 V | - | Military | MIL-PRF-19500/304 | Stud Mount | DO-203AA | -65°C ~ 175°C |
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BAS16B5003DIODE GP 80V 250MA SOT23-3-11 |
1,073,000 |
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Datasheet | BAS16 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23-3-11 | 150°C |
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BAS16B5000DIODE GP 80V 250MA SOT23-3-11 |
180,000 |
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Datasheet | BAS16 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23-3-11 | 150°C |
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1SS270-EDIODE FOR HIGH SPEED SWITCHING |
104,550 |
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Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
