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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSH1065B-F155 650V 10A SIC SBD GEN 1.5 onsemi	153	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
RB218RSM10STFTL1 100V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	4,000	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	20A	880 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5.2 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
IDW15E65D2FKSA1 DIODE GP 650V 30A TO247-3-1 Infineon Technologies	219	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	30A	2.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
DSC08A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 650 V	348pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
DSC10C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,495	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 650 V	348pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
RB078BM10SFHHTL 100V 5A, TO-252, ULTRA LOW IR SB Rohm Semiconductor	2,480	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	100 V	5A	740 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6.4 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	175°C
MBR30170MFST3G DIODE SCHOTTKY 170V 30A 5DFN onsemi	5,000	RFQ	Datasheet	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Active	Schottky	170 V	30A	890 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 170 V	821pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
YQ30NL10SETL TRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor	990	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	-	-	Surface Mount	TO-263L	150°C
IDW50E60FKSA1 DIODE GEN PURP 600V 80A TO247-3 Infineon Technologies	240	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	80A	2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
FFSB0665B DIODE SIL CARB 650V 8A D2PAK-2 onsemi	712	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	259pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
DSC10A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	1,956	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 650 V	434pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
RBQ16NL45BFHHTL 45V, 16A, TO-263L, LOW IR SBD FO Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	16A	610 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 45 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
IDW30E60FKSA1 DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies	179	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	60A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	143 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
RFUH25NS3SFHTL FAST RECOVERY DIODE (AEC-Q101 QU Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	20A	1.45 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	Automotive	AEC-Q101	Surface Mount	LPDS	150°C
IDH04SG60CXKSA2 DIODE SIL CARB 600V 4A TO220-2-1 Infineon Technologies	334	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	4A	2.3 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 600 V	80pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
RFNL15TJ6SFHGC9 SUPER FAST RECOVERY DIODE : RFNL Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	15A	1.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
YQ30NL10SEFHTL TRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor	954	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	150°C
FFSB0865B DIODE SIL CARB 650V 10.1A D2PAK onsemi	765	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10.1A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
DST3060DJF DIODE SCHOTTKY 60V 30A 8DFN Littelfuse Inc.	17,683	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	Schottky	60 V	30A	770 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	-	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
FFSD1065B DIODE SIL CARB 650V 13.5A DPAK onsemi	4,116	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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