Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDWD120E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	210	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
STPSC12065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	749	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
FFSM1265A DIODE SIL CARB 650V 12.5A 4PQFN onsemi	2,585	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12.5A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
IDWD60E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	187	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	99 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E120D7XKSA1 DIODE GEN PURP 1200V 116A TO247 Infineon Technologies	235	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	116A	3 V @ 75 A	Fast Recovery =< 500ns, > 5A (Io)	195 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	210	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
APT60D120SG DIODE GEN PURP 1.2KV 60A D3 Microchip Technology	156	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
FFSB2065B DIODE SIL CARB 650V 22.8A D2PAK onsemi	2,178	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	22.8A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
1N3600UR/TR SIGNAL OR COMPUTER DIODE Microchip Technology	177	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	75 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
FFSB1065A DIODE SCHOTTKY 650V 14A D2PAK-3 onsemi	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	14A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
SCS210ANHRTRL 650V, 10A, SMD, SILICON-CARBIDE Rohm Semiconductor	870	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	360pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
IDWD100E120D7XKSA1 DIODE GEN PURP 1200V 146A TO247 Infineon Technologies	224	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	146A	3 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	205 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD100E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	232	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDFW40E65D1EXKSA1 DIODE GP 650V 42A TO247-3-AI Infineon Technologies	210	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	42A	2.1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	76 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-AI	-40°C ~ 175°C
SCS310AMC7G DIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS212ANHRTRL 650V 12A SMD SILICON CARBIDE Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	440pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
FFSP3065B-F085 DIODE SIL CARB 650V 30A TO220-2 onsemi	1,600	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-2	-55°C ~ 175°C
SCS205KNHRTRL 1200V 5A SMD SILICON CARBIDE Rohm Semiconductor	200	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	260pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
SCS310AGC16 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	1,000	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
IDWD120E120D7XKSA1 DIODE GEN PURP 1200V 177A TO247 Infineon Technologies	129	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	177A	3 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	215 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C

Total 14609 Record«Prev 1... 172 173 174 175176177 178 179...731 Next»

leon@xmagelec.com