Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SE30124-M3/I

SE30124-M3/I

30A,1200V,DO-218AB RECTIFIER

Vishay

3,000
RFQ
Datasheet - DO-218AB Tape & Reel (TR) Active Standard 1200 V 4.2A 1.2 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V 35pF @ 400V, 1MHz - - Surface Mount DO-218AB -55°C ~ 175°C
FFSM0865B

FFSM0865B

DIODE SIL CARB 650V 11.6A 4PQFN

onsemi

2,980
RFQ
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
IDWD30E120D7XKSA1

IDWD30E120D7XKSA1

DIODE GEN PURP 1200V 52A TO247-2

Infineon Technologies

120
RFQ
Datasheet - TO-247-2 Tube Active Standard 1200 V 52A 3 V @ 30 A Fast Recovery =< 500ns, > 5A (Io) 135 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
D6015L52TP

D6015L52TP

DIODE GP 600V 9.5A ITO220AB

Littelfuse Inc.

457
RFQ
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active Standard 600 V 9.5A 1.6 V @ 15 A Standard Recovery >500ns, > 200mA (Io) 4 µs 10 µA @ 600 V - - - Through Hole ITO-220AB -40°C ~ 125°C
IDWD20E65E7XKSA1

IDWD20E65E7XKSA1

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Infineon Technologies

220
RFQ
Datasheet - TO-247-2 Tube Active Standard 650 V 42A 2.1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 74 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
RFNL20TJ6SFHGC9

RFNL20TJ6SFHGC9

SUPER FAST RECOVERY DIODE : RFNL

Rohm Semiconductor

990
RFQ
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 10 nA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
IDWD40E120D7XKSA1

IDWD40E120D7XKSA1

DIODE GEN PURP 1200V 67A TO247-2

Infineon Technologies

210
RFQ
Datasheet - TO-247-2 Tube Active Standard 1200 V 67A 3 V @ 40 A Fast Recovery =< 500ns, > 5A (Io) 155 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
IDWD30E65E7XKSA1

IDWD30E65E7XKSA1

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Infineon Technologies

193
RFQ
Datasheet - TO-247-2 Tube Active Standard 650 V 50A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 82 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -
SE30124HM3/I

SE30124HM3/I

30A,1200V,DO-218AB RECTIFIER

Vishay

3,000
RFQ
Datasheet - DO-218AB Tape & Reel (TR) Active Standard 1200 V 4.2A 1.2 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V 35pF @ 400V, 1MHz Automotive AEC-Q101 Surface Mount DO-218AB -55°C ~ 175°C
RFUH20TJ6SFHGC9

RFUH20TJ6SFHGC9

SUPER FAST RECOVERY DIODE : RFUH

Rohm Semiconductor

1,000
RFQ
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
IDWD50E120D7XKSA1

IDWD50E120D7XKSA1

DIODE GEN PURP 1200V 81A TO247-2

Infineon Technologies

230
RFQ
Datasheet - TO-247-2 Tube Active Standard 1200 V 81A 3 V @ 50 A Fast Recovery =< 500ns, > 5A (Io) 160 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
FFSB0665A

FFSB0665A

DIODE SIL CARB 650V 9A D2PAK-3

onsemi

800
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
FFSP2065B

FFSP2065B

DIODE SIL CARB 650V 22.5A TO220

onsemi

397
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 22.5A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 866pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
IDK08G65C5XTMA2

IDK08G65C5XTMA2

DIODE SIL CARB 650V 8A TO263-2

Infineon Technologies

959
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns - 250pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
FFSD1065B-F085

FFSD1065B-F085

DIODE SIL CARB 650V 13.5A DPAK

onsemi

1,968
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 13.5A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 424pF @ 1V, 100kHz Automotive AEC-Q101 Surface Mount TO-252 (DPAK) -55°C ~ 175°C
IDWD40E65E7XKSA1

IDWD40E65E7XKSA1

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Infineon Technologies

168
RFQ
Datasheet - TO-247-2 Tube Active Standard 650 V 50A 2.1 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 89 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
JAN1N5615

JAN1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

853
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
FFSM1065B

FFSM1065B

DIODE SIL CARB 650V 13.5A 4PQFN

onsemi

4,519
RFQ
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 13.5A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 424pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
IDWD50E65E7XKSA1

IDWD50E65E7XKSA1

DIODE GEN PURP 650V 92A TO247-2

Infineon Technologies

220
RFQ
Datasheet - TO-247-2 Tube Active Standard 650 V 92A 2.1 V @ 50 A Fast Recovery =< 500ns, > 5A (Io) 94 ns 20 µA @ 650 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
IDWD60E120D7XKSA1

IDWD60E120D7XKSA1

DIODE GEN PURP 1200V 94A TO247-2

Infineon Technologies

192
RFQ
Datasheet - TO-247-2 Tube Active Standard 1200 V 94A 3 V @ 60 A Fast Recovery =< 500ns, > 5A (Io) 175 ns 20 µA @ 1200 V - - - Through Hole PG-TO247-2-2 -40°C ~ 175°C
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