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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSH3065B DIODE SIL CARB 650V 37A TO247-2 onsemi	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1260pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
JAN1N5809 DIODE GEN PURP 100V 6A AXIAL Microchip Technology	117	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
FFSP15120A DIODE SIL CARB 1.2KV 15A TO220L onsemi	574	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.75 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SCS215ANHRTRL 650V 15A SMD SILICON CARBIDE Rohm Semiconductor	500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
JANTX1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	233	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
IDWD140E120D7XKSA1 DIODE GEN PURP 1200V 207A TO247 Infineon Technologies	167	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	207A	3 V @ 140 A	Fast Recovery =< 500ns, > 5A (Io)	225 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
1N3070-1 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	257	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	-	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
1N3070UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	135	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
SCS212AJTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	960	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	-	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS320AMC7G DIODE SIL CARB 650V 20A TO220FM Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS320AGC16 DIODE SIL CARB 650V 20A TO220ACP Rohm Semiconductor	1,000	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
SCS220ANHRTRL 650V, 20A, SMD, SILICON-CARBIDE Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
SCS210KNHRTRL 1200V, 10A, SMD, SILICON-CARBIDE Rohm Semiconductor	994	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	530pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
JANTX1N5809US DIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology	108	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N5418US DIODE GEN PURP 400V 3A D-5B Microchip Technology	102	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
SCS230ANHRTRL 650V, 30A, SMD, SILICON-CARBIDE Rohm Semiconductor	892	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.55 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 600 V	1090pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
FFSH5065B-F155 650V 50A SIC SBD GEN 1.5 onsemi	435	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	48A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	2030pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N6628 DIODE GEN PURP 600V 1.75A A-PAK Microchip Technology	102	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	2 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
CDLL5711/TR DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	101	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
JANTX1N5711UR-1/TR DIODE SCHOTTKY 50V 33MA DO213AA Microchip Technology	829	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Schottky	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Surface Mount	DO-213AA	-65°C ~ 150°C

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