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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
DUR6060W DIODE GEN PURP 600V 60A TO247AC Littelfuse Inc.	193	RFQ	Datasheet	DUR	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
STPSC15H12WL DIODE SIL CARB 1.2KV 15A DO247 STMicroelectronics	982	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
MSC030SDA070K DIODE SIL CARB 700V 30A TO220-2 Microchip Technology	119	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	30A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
MSC015SDA120B DIODE SCHOTTKY 1.2KV 15A TO247 Microchip Technology	134	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-
SCS312AJTLL DIODE SIL CARBIDE 650V 12A LPTL Rohm Semiconductor	849	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
RFL30TZ6SGC13 DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor	624	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
IDW16G65C5XKSA1 DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies	257	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
SCS208AJHRTLL DIODE SIL CARB 650V 8A TO263AB Rohm Semiconductor	932	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
NDSH20120C DIODE SIL CARB 1.2KV 26A TO247-2 onsemi	664	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	26A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1480pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSB2065B-F085 DIODE SIL CARB 650V 20A D2PAK-3 onsemi	678	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
JANTX1N3595UR-1 DIODE GP 125V 150MA DO213AA Microchip Technology	141	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Military	MIL-S-19500-241	Surface Mount	DO-213AA	-65°C ~ 175°C
SCS315AJTLL DIODE SIL CARBIDE 650V 15A LPTL Rohm Semiconductor	400	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
UJ3D1220K2 DIODE SIL CARB 1.2KV 20A TO247-2 Qorvo	327	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	810pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSP3065A DIODE SIL CARB 650V 30A TO220-2L onsemi	1,291	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	1705pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
STTH1506DPI DIODE GEN PURP 600V 15A DOP3I STMicroelectronics	600	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	15A	3.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
FFSP20120A DIODE SIL CARB 1.2KV 20A TO220L onsemi	734	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
DUR60120W DIODE GEN PURP 1.2KV 60A TO247AC Littelfuse Inc.	20,857	RFQ	Datasheet	DUR	TO-247-2	Tube	Active	Standard	1200 V	60A	3.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	650 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
FFSH2065B-F085 DIODE SIL CARB 650V 20A TO247-2 onsemi	157	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
SCS210AJHRTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	894	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
RFL60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	601	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C

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