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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RB078BGE30STL DIODE SCHOTTKY 30V 5A TO252GE Rohm Semiconductor	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	30 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	-	-	-	Surface Mount	TO-252GE	150°C
RFN20TF6SFHC9 DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor	458	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220NFM	150°C (Max)
RFN10NS3STL DIODE GEN PURP 350V 10A LPDS Rohm Semiconductor	975	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	350 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 350 V	-	-	-	Surface Mount	LPDS	150°C
RFUH20TJ6SGC9 DIODE GP 600V 20A TO220ACFP Rohm Semiconductor	635	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220ACFP	150°C
1N4938-1 DIODE GEN PURP 175V 100MA DO35 Microchip Technology	369	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
FFSD0665A DIODE SIL CARBIDE 650V 11A DPAK onsemi	2,396	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
UJ3D06512TS DIODE SIL CARB 650V 12A TO220-2 Qorvo	10,601	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	392pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC6H065D DIODE SIL CARB 650V 6A TO220AC STMicroelectronics	958	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
SCS302AHGC9 DIODE SIC 650V 2.15A TO220ACP Rohm Semiconductor	643	RFQ	Datasheet	-	TO-220-2	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	2.15A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	10.8 µA @ 650 V	110pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
IDP18E120XKSA1 DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies	423	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	31A	2.15 V @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	195 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
RFNL5TJ6SFHGC9 DIODE GEN PURP 600V 5A TO220ACFP Rohm Semiconductor	2,739	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220ACFP	150°C
RFUH20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	944	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
RFN20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	883	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 430 V	-	-	-	Surface Mount	LPDS	150°C
RF505TF6SC9 DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor	430	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220NFM	150°C
STTH12T06DI DIODE GP 600V 12A TO220AC INS STMicroelectronics	548	RFQ	Datasheet	-	TO-220-2 Insulated, TO-220AC	Tube	Active	Standard	600 V	12A	2.95 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	20 µA @ 600 V	-	-	-	Through Hole	TO-220AC ins	-40°C ~ 175°C
IDP08E65D2XKSA1 DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies	2	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	650 V	8A	2.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	40 µA @ 650 V	-	-	-	Through Hole	TO-220-2	-40°C ~ 175°C
STTH30RQ06DY DIODE GEN PURP 600V 30A TO220AC STMicroelectronics	998	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFSP1065B DIODE SIL CARB 650V 11A TO220-2 onsemi	628	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDL06G65C5XUMA2 DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies	2,908	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
FFSP0665A DIODE SIL CARB 650V 8.8A TO220L onsemi	688	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8.8A	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	361pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

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