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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSP1665A DIODE SIL CARB 650V 16A TO220-2 onsemi	1,882	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.75 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC12065G2Y-TR DIODE SIL CARB 650V 12A D2PAK HV STMicroelectronics	859	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
FFSM1065A DIODE SIL CARBIDE 650V 11A 4PQFN onsemi	2,995	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC12H065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	966	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
FFSH1265BDN-F085 DIODE SIL CARB 650V 7.2A TO247-3 onsemi	756	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	7.2A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
SCS308AJTLL DIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor	915	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
FFSP08120A DIODE SIL CARB 1.2KV 8A TO220-2L onsemi	365	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.75 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	538pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
UJ3D06530TS DIODE SIL CARB 650V 30A TO220-2 Qorvo	7,715	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	370 µA @ 650 V	990pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STTH30RQ06L2-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	600	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Surface Mount	HU3PAK	175°C
SCS220AGC17 DIODE SIC 650V 20A TO220ACFP Rohm Semiconductor	706	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
1N3595UR-1 DIODE GP 125V 150MA DO213AA Microchip Technology	624	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
IDH10SG60CXKSA2 DIODE SIL CARB 600V 10A TO220-1 Infineon Technologies	330	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
AIDK08S65C5ATMA1 DISCRETE DIODES Infineon Technologies	188	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	248pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
SCS206AJHRTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,756	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
SCS310AJTLL DIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor	518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
APT15DQ120BHBG DIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology	101	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	15A	3.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
STTH6010WY DIODE GEN PURP 1KV 60A DO247 STMicroelectronics	548	RFQ	Datasheet	Q	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1000 V	-	Automotive	-	Through Hole	DO-247	-40°C ~ 175°C
FFSP2065BDN-F085 DIODE SIL CARB 650V 10A TO220-3 onsemi	180	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C
LSIC2SD065D10A DIODE SIL CARBIDE 650V 27A TO263 Littelfuse Inc.	499	RFQ	Datasheet	GEN2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	470pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
AIDK12S65C5ATMA1 DISCRETE DIODES Infineon Technologies	757	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	363pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C

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