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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SCS215KGC17 DIODE SIC 1.2KV 15A TO220ACFP Rohm Semiconductor	1,996	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	790pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STPSC15H12G2-TR DIODE SIL CARB 1.2KV 15A D2PAK STMicroelectronics	1,943	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
SCS215AEGC11 DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor	293	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C
RFS60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	566	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
FFSH1065B-F085 DIODE SIL CARB 650V 11.5A TO247 onsemi	1,685	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
IDW20G65C5BXKSA2 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	122	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
SCS210KGC17 DIODE SIC 1.2KV 10A TO220ACFP Rohm Semiconductor	397	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
FFSP4065BDN-F085 DIODE SIL CARB 650V 20A TO220-3 onsemi	756	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C
SCS220AEGC11 DIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor	345	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C
FFSH20120A-F085 DIODE SIL CARB 1.2KV 30A TO247-2 onsemi	398	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
SCS215AJHRTLL DIODE SIL CARB 650V 15A TO263AB Rohm Semiconductor	2,008	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
MSC020SDA120K DIODE SIL CARB 1.2KV 49A TO220-2 Microchip Technology	105	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	49A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1130pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSH20120ADN-F085 DIODE SIL CARB 1.2KV 15A TO247-3 onsemi	304	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
FFSH4065BDN-F085 DIODE SIL CARB 650V 20A TO247-3 onsemi	140	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
LSIC2SD065D20A DIODE SIL CARB 650V 20A TO220AC Littelfuse Inc.	742	RFQ	Datasheet	Gen2	TO-220-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 45 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220AC	-
SCS220AJHRTLL DIODE SIL CARB 650V 20A TO263AB Rohm Semiconductor	2,697	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
FFSB20120A-F085 DIODE SIL CARB 1.2KV 32A D2PAK onsemi	2,137	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	32A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
SCS220KGC17 DIODE SIC 1.2KV 20A TO220ACFP Rohm Semiconductor	991	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	1050pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
NDSH50120C DIODE SIL CARB 1.2KV 53A TO247-2 onsemi	1,167	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	53A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	3691pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
LSIC2SD170B10 DIODE SIL CARB 1.7KV 31A TO247-2 Littelfuse Inc.	437	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	31A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1700 V	757pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C

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