Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
FFSD0865B

FFSD0865B

DIODE SIL CARB 650V 11.6A DPAK

onsemi

148
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SCS302AJTLL

SCS302AJTLL

DIODE SIL CARB 650V 2.15A LPTL

Rohm Semiconductor

499
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2.15 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
APT40DQ120SG

APT40DQ120SG

DIODE GEN PURP 1.2KV 40A D3PAK

Microchip Technology

958
RFQ
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 1200 V 40A 3.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 100 µA @ 1200 V - - - Surface Mount D3PAK -55°C ~ 175°C
RFN20TJ6SFHGC9

RFN20TJ6SFHGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

978
RFQ
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220ACFP 150°C
UJ3D06516TS

UJ3D06516TS

DIODE SIL CARB 650V 16A TO220-2

Qorvo

938
RFQ
Datasheet Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
FFSP1065B-F085

FFSP1065B-F085

DIODE SIL CARB 650V 10A TO220-2

onsemi

789
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
RFN20NS3STL

RFN20NS3STL

DIODE GEN PURP 350V 20A LPDS

Rohm Semiconductor

784
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 20A 1.35 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
STPSC8H065D

STPSC8H065D

DIODE SIL CARB 650V 8A TO220AC

STMicroelectronics

794
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STTH30M06SPF

STTH30M06SPF

DIODE GEN PURP 600V 30A TO3PF

STMicroelectronics

876
RFQ
Datasheet - TO-3P-3 Full Pack Tube Active Standard 600 V 30A 3.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 60 µA @ 600 V - - - Through Hole TO-3PF 175°C (Max)
RFS30TZ6SGC13

RFS30TZ6SGC13

DIODE GEN PURP 650V 30A TO247GE

Rohm Semiconductor

584
RFQ
Datasheet - TO-247-2 Tube Not For New Designs Standard 650 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 650 V - - - Through Hole TO-247GE 175°C
FFSD0865B-F085

FFSD0865B-F085

DIODE SIL CARB 650V 11.6A DPAK

onsemi

3,693
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
STTH30R04DY

STTH30R04DY

DIODE GEN PURP 400V 30A TO220AC

STMicroelectronics

772
RFQ
Datasheet - TO-220-2 Tube Active Standard 400 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
FFSM0665B

FFSM0665B

DIODE SIL CARB 650V 9.1A 4PQFN

onsemi

2,980
RFQ
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
FFSP0865A

FFSP0865A

DIODE SIL CARB 650V 13A TO220-2

onsemi

790
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC8H065BY-TR

STPSC8H065BY-TR

DIODE SIL CARBIDE 650V 8A DPAK

STMicroelectronics

4,209
RFQ
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A - No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount DPAK -40°C ~ 175°C
STPSC10065GY-TR

STPSC10065GY-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

621
RFQ
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 650 V 670pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
FFSM0465A

FFSM0465A

DIODE SIL CARBIDE 650V 4A 4PQFN

onsemi

4,028
RFQ
Datasheet - 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.75 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 247pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
RFUH20TF6SC9

RFUH20TF6SC9

DIODE GEN PURP 600V 20A TO220NFM

Rohm Semiconductor

932
RFQ
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-220NFM 150°C
FFSB1065B

FFSB1065B

DIODE SIL CARB 650V 27A D2PAK-2

onsemi

686
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 27A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
IDK05G120C5XTMA1

IDK05G120C5XTMA1

DIODE SIC 1.2KV 19.1A TO263-1

Infineon Technologies

955
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 19.1A 1.8 V @ 5 A No Recovery Time > 500mA (Io) - 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
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