Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
LSIC2SD120A10A

LSIC2SD120A10A

DIODE SIL CARB 1.2KV 28A TO220L

Littelfuse Inc.

4,026
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 28A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 582pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
JANTX1N4248

JANTX1N4248

DIODE GEN PURP 800V 1A E3

Microchip Technology

5,575
RFQ
Datasheet - E3 Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 - E3 -65°C ~ 175°C
1N6642USE3/TR

1N6642USE3/TR

DIODE GP 75V 300MA B SQ-MELF

Microchip Technology

2,664
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N6638U

JANTX1N6638U

DIODE GEN PURP 125V 300MA D-5B

Microchip Technology

5,191
RFQ

-

- SQ-MELF, E Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V - Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6638US

JANTX1N6638US

DIODE GP 125V 300MA B SQ-MELF

Microchip Technology

6,963
RFQ

-

- SQ-MELF, B Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns - - Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5809/TR

1N5809/TR

DIODE GEN PURP 100V 3A B AXIAL

Microchip Technology

9,246
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
CDLL5817/TR

CDLL5817/TR

DIODE SCHOTTKY 20V 1A DO213AB

Microchip Technology

7,339
RFQ

-

- DO-213AB, MELF Tape & Reel (TR) Active Schottky 20 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - - - Surface Mount DO-213AB -55°C ~ 125°C
1N3070/TR

1N3070/TR

DIODE GEN PURP 175V 100MA DO7

Microchip Technology

4,843
RFQ

-

- DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-7 -65°C ~ 175°C
1N5802/TR

1N5802/TR

DIODE GEN PURP 50V 1A

Microchip Technology

5,560
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N3064/TR

1N3064/TR

DIODE GEN PURP REV 50V 75MA DO7

Microchip Technology

3,273
RFQ

-

- DO-204AA, DO-7, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 50 V 75mA 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - - - Through Hole DO-7 -55°C ~ 175°C
1N5623

1N5623

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

5,684
RFQ
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N6620/TR

JAN1N6620/TR

DIODE GEN PURP 220V 2A

Microchip Technology

8,604
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 220 V 2A 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N5616US/TR

1N5616US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

7,967
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - - - Surface Mount D-5A -65°C ~ 200°C
RURU15060

RURU15060

DIODE GEN PURP 600V 150A TO218

onsemi

4,022
RFQ
Datasheet - TO-218-1 Tube Obsolete Standard 600 V 150A 1.6 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 250 µA @ 600 V - - - Through Hole TO-218 -65°C ~ 175°C
1C5811-MSCL

1C5811-MSCL

UFR,FRR

Microchip Technology

3,848
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JANTX1N6642US

JANTX1N6642US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

9,899
RFQ
Datasheet - SQ-MELF, D Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTX1N6642U

JANTX1N6642U

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

4,708
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
1N6661

1N6661

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

9,900
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5418/TR

1N5418/TR

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

2,244
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N4248/TR

JANTX1N4248/TR

DIODE GEN PURP 800V 1A E3

Microchip Technology

3,523
RFQ

-

- E3 Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - Military MIL-PRF-19500/286 - E3 -65°C ~ 175°C
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