Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5809E3

1N5809E3

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

9,957
RFQ

-

- B, Axial Bulk Active Standard 100 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N6642U/TR

JANTX1N6642U/TR

DIODE GEN PURP 75V 300MA D-5B

Microchip Technology

7,303
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANTX1N6642US/TR

JANTX1N6642US/TR

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

4,646
RFQ

-

- SQ-MELF, D Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
SCS210AMC

SCS210AMC

DIODE SIL CARB 650V 10A TO220FM

Rohm Semiconductor

4
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
JAN1N5802

JAN1N5802

DIODE GEN PURP 50V 2.5A AXIAL

Microchip Technology

7,329
RFQ
Datasheet - A, Axial Bulk Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5807

JANTX1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

6,359
RFQ
Datasheet - B, Axial Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5711-1/TR

JANTX1N5711-1/TR

DIODE SCHOTTKY 50V 33MA DO35

Microchip Technology

4,418
RFQ
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 50 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JANTX1N5806US/TR

JANTX1N5806US/TR

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

9,012
RFQ
Datasheet - SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 1A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTX1N5417/TR

JANTX1N5417/TR

DIODE GEN PURP 200V 3A

Microchip Technology

5,809
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5416/TR

JANTX1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

8,008
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N6661/TR

1N6661/TR

DIODE GEN PURP 225V 500MA DO35

Microchip Technology

4,612
RFQ
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 225 V 500mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5553

JAN1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

9,356
RFQ
Datasheet - B, Axial Bulk Active Standard 800 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5554

JAN1N5554

DIODE GEN PURP 1KV 3A AXIAL

Microchip Technology

5,666
RFQ
Datasheet - B, Axial Bulk Active Standard 1000 V 3A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 1000 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
1N5552US

1N5552US

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

6,263
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - - - Surface Mount D-5B -65°C ~ 175°C
1N6639

1N6639

DIODE GEN PURP 75V 300MA DO35

Microchip Technology

4,317
RFQ

-

- DO-204AH, DO-35, Axial Bulk Active Standard 75 V 300mA 1.2 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns - - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N6640

1N6640

DIODE GEN PURPOSE

Microchip Technology

8,798
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
1N5623E3/TR

1N5623E3/TR

STD RECTIFIER

Microchip Technology

5,041
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N6643US

JANTX1N6643US

DIODE GEN PURP 125V 300MA D-5D

Microchip Technology

2,162
RFQ
Datasheet - SQ-MELF, D Bulk Active Standard 125 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 50 nA @ 20 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTX1N6643U

JANTX1N6643U

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

4,059
RFQ

-

- SQ-MELF, E Bulk Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 50 V - Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
1N6641

1N6641

DIODE GEN PURPOSE

Microchip Technology

6,025
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
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