Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6643US/TR

1N6643US/TR

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

3,341
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 50 nA @ 50 V 5pF @ 0V, 1MHz - - Surface Mount D-5B -65°C ~ 175°C
1N6643U/TR

1N6643U/TR

DIODE GP 75V 300MA SQ-MELF B

Microchip Technology

4,632
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 75 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 50 V 5pF @ 0V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 200°C
CD5809

CD5809

UFR,FRR

Microchip Technology

3,136
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
CD5811

CD5811

UFR,FRR

Microchip Technology

7,785
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JAN1N6640US/TR

JAN1N6640US/TR

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

3,520
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 50 V 300mA 1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/609 Surface Mount D-5B -65°C ~ 175°C
JANTX1N5809/TR

JANTX1N5809/TR

DIODE GEN PURP 100V 3A

Microchip Technology

8,243
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5807/TR

JANTX1N5807/TR

DIODE GEN PURP 50V 3A

Microchip Technology

4,655
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
SCS110AMC

SCS110AMC

DIODE SIL CARB 600V 10A TO220FM

Rohm Semiconductor

4,548
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 430pF @ 1V, 1MHz - - Through Hole TO-220FM 150°C (Max)
1N5811USE3

1N5811USE3

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

6,776
RFQ

-

- SQ-MELF, B Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N457AUR

1N457AUR

DIODE GP 70V 150MA DO213AA

Microchip Technology

2,234
RFQ
Datasheet - DO-213AA Bulk Active Standard 70 V 150mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 70 V - - - Surface Mount DO-213AA -65°C ~ 150°C
1N3614/TR

1N3614/TR

DIODE GEN PURP 800V 1A

Microchip Technology

7,516
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 800 V - - - Through Hole A, Axial -65°C ~ 175°C
1N5550US/TR

1N5550US/TR

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

5,051
RFQ
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5550USE3

1N5550USE3

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

8,708
RFQ
Datasheet - SQ-MELF, B Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
JAN1N5819-1

JAN1N5819-1

DIODE SCHOTTKY 45V 1A DO41

Microchip Technology

5,866
RFQ
Datasheet - DO-204AL, DO-41, Axial Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V - Military MIL-PRF-19500/586 Through Hole DO-41 -65°C ~ 150°C
1N5809E3/TR

1N5809E3/TR

DIODE GEN PURP 100V 6A B AXIAL

Microchip Technology

3,919
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole B, Axial -65°C ~ 175°C
1N5551USE3

1N5551USE3

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

7,996
RFQ
Datasheet - SQ-MELF, B Bulk Active Standard 400 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5811E3/TR

1N5811E3/TR

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

2,225
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5415

JANTX1N5415

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

8,746
RFQ
Datasheet - B, Axial Bulk Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5811/TR

JANTX1N5811/TR

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

6,347
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JAN1N5802/TR

JAN1N5802/TR

DIODE GEN PURP 50V 2.5A

Microchip Technology

3,500
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 50 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
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