Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N6643US

JAN1N6643US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

3,232
RFQ
Datasheet - SQ-MELF, D Bulk Discontinued at Digi-Key Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 75 V 5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
IDC28D120T6MX1SA2

IDC28D120T6MX1SA2

DIODE GP 1.2KV 50A WAFER

Infineon Technologies

8,894
RFQ
Datasheet - Die Bulk Obsolete Standard 1200 V 50A 2.05 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
1N5415/TR

1N5415/TR

DIODE GEN PURP 50V 3A

Microchip Technology

6,985
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5416/TR

1N5416/TR

DIODE GEN PURP 100V 3A

Microchip Technology

6,246
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5417

JAN1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

6,095
RFQ
Datasheet - B, Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JAN1N5806US

JAN1N5806US

DIODE GEN PURP 150V 2.5A D-5A

Microchip Technology

2,996
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JAN1N5811

JAN1N5811

DIODE GEN PURP 150V 6A AXIAL

Microchip Technology

2,697
RFQ
Datasheet - B, Axial Bulk Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N3595A-1

JANTXV1N3595A-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

2,505
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N3957/TR

JANTX1N3957/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,326
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
LSIC2SD120C08

LSIC2SD120C08

DIODE SIC 1.2KV 24.5A TO252L

Littelfuse Inc.

7,117
RFQ
Datasheet Gen2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 24.5A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 454pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
JAN1N6638U/TR

JAN1N6638U/TR

DIODE GEN PURP 150V 300MA D-5B

Microchip Technology

7,605
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 150 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JAN1N6638US/TR

JAN1N6638US/TR

DIODE GP 150V 300MA B SQ-MELF

Microchip Technology

6,677
RFQ

-

- DO-213AB, MELF Tape & Reel (TR) Active Standard 150 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANTX1N914UR-1

JANTX1N914UR-1

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology

8,568
RFQ

-

- DO-213AA Bulk Active Standard 75 V 200mA 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V 4pF @ 1.5V, 1MHz Military MIL-PRF-19500/116 Surface Mount DO-213AA -65°C ~ 175°C
1N3595UR-1/TR

1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

8,196
RFQ
Datasheet - DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5550/TR

JANTX1N5550/TR

DIODE GEN PURP 200V 5A

Microchip Technology

9,080
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
CDLL5822/TR

CDLL5822/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

8,808
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CDLL5820/TR

CDLL5820/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

9,611
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CDLL5821/TR

CDLL5821/TR

SMALL-SIGNAL SCHOTTKY

Microchip Technology

3,634
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
SCS112AGC

SCS112AGC

DIODE SIL CARB 600V 12A TO220AC

Rohm Semiconductor

3,335
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 240 µA @ 600 V 516pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
JAN1N3595UR-1

JAN1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

2,685
RFQ
Datasheet - DO-213AA Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
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