Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N5417-1/TR

1N5417-1/TR

DIODE GEN PURP REV 200V 3A B

Microchip Technology

3,327
RFQ

-

- Axial Tape & Reel (TR) Active Standard, Reverse Polarity 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B -65°C ~ 175°C
BYT30P-1000

BYT30P-1000

DIODE GEN PURP 1KV 30A SOD93-2

STMicroelectronics

3,725
RFQ
Datasheet - SOD-93-2 Tube Obsolete Standard 1000 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 100 µA @ 1000 V - - - Through Hole SOD-93-2 -40°C ~ 150°C
1N4942

1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

4,966
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5806/TR

JAN1N5806/TR

DIODE GEN PURP 150V 2.5A

Microchip Technology

2,346
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 150 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417/TR

1N5417/TR

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

2,832
RFQ
Datasheet - Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
1N4942-1

1N4942-1

DIODE GEN PURP 200V 1A

Microchip Technology

5,122
RFQ

-

- Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Through Hole - -65°C ~ 175°C
1N3613

1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3,712
RFQ
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N3611/TR

JANTX1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

9,926
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
1N3611E3/TR

1N3611E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

4,493
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
1N5615E3/TR

1N5615E3/TR

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,687
RFQ

-

- Axial Tape & Reel (TR) Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
LSIC2SD065E16CCA

LSIC2SD065E16CCA

DIODE SIL CARB 650V 23A TO247AD

Littelfuse Inc.

9,958
RFQ
Datasheet GEN2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 23A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 415pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
IDB10S60C

IDB10S60C

DIODE SIL CARB 600V 10A TO263-3

Infineon Technologies

3,731
RFQ
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 600 V 480pF @ 1V, 1MHz - - Surface Mount PG-TO263-3-2 -55°C ~ 175°C
JAN1N4942/TR

JAN1N4942/TR

DIODE GEN PURP 200V 1A

Microchip Technology

2,781
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
SIDC20D60C6

SIDC20D60C6

DIODE GP 600V 75A WAFER

Infineon Technologies

9,216
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 600 V 75A 1.9 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
LSIC2SD120E10CC

LSIC2SD120E10CC

DIODE SIC 1.2KV 17.5A TO247AD

Littelfuse Inc.

7,959
RFQ
Datasheet Gen2 TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 17.5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 310pF @ 1V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
JANTX1N5616/TR

JANTX1N5616/TR

DIODE GEN PURP 400V 1A

Microchip Technology

4,653
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JANTX1N5618/TR

JANTX1N5618/TR

DIODE GEN PURP 600V 1A

Microchip Technology

5,390
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
APT60S20SG/TR

APT60S20SG/TR

DIODE SCHOTTKY 200V 75A D3PAK

Microchip Technology

9,492
RFQ
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 1 mA @ 200 V - - - Surface Mount D3PAK -55°C ~ 150°C
1N4247/TR

1N4247/TR

DIODE GEN PURP 600V 1A

Microchip Technology

9,125
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - - - Through Hole A, Axial -65°C ~ 175°C
1N5417E3/TR

1N5417E3/TR

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

7,153
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - - - - Through Hole B, Axial -65°C ~ 175°C
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