Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS306AMC

SCS306AMC

DIODE SIL CARB 650V 6A TO220FM

Rohm Semiconductor

6,403
RFQ
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220FM 175°C (Max)
JAN1N5712-1/TR

JAN1N5712-1/TR

DIODE SCHOTTKY 16V 33MA DO35

Microchip Technology

5,698
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 16 V 33mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5619E3/TR

1N5619E3/TR

DIODE GEN PURP 600V 1A A AXIAL

Microchip Technology

7,282
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 400 V 25pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 200°C
1N5419

1N5419

DIODE GEN PURP 500V 3A B SQ-MELF

Microchip Technology

4,328
RFQ
Datasheet - SQ-MELF, B Bulk Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5803

1N5803

DIODE GEN PURP 75V 1A AXIAL

Microchip Technology

8,532
RFQ
Datasheet - A, Axial Bulk Obsolete Standard 75 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N6638

JAN1N6638

DIODE GEN PURP 150V 300MA AXIAL

Microchip Technology

2,367
RFQ
Datasheet - D, Axial Bulk Active Standard 150 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
CDLL645/TR

CDLL645/TR

DIODE GP 225V 400MA DO213AA

Microchip Technology

3,163
RFQ

-

- DO-213AA Tape & Reel (TR) Active Standard 225 V 400mA 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 225 V - - - Surface Mount DO-213AA -65°C ~ 175°C
1N459AUR

1N459AUR

DIODE GP 200V 150MA DO213AA

Microchip Technology

8,293
RFQ
Datasheet - DO-213AA Bulk Active Standard 200 V 150mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - - - Surface Mount DO-213AA -65°C ~ 150°C
BYT30PI-1000RG

BYT30PI-1000RG

DIODE GEN PURP 1KV 30A DOP3I

STMicroelectronics

4,625
RFQ
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Obsolete Standard 1000 V 30A 1.9 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 165 ns 100 µA @ 1000 V - - - Through Hole DOP3I -40°C ~ 150°C
JAN1N4946

JAN1N4946

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

2,026
RFQ
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 600 V - Military MIL-PRF-19500/360 Through Hole A, Axial -65°C ~ 175°C
1N6643

1N6643

DIODE GEN PURPOSE

Microchip Technology

2,257
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 500 nA @ 50 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N5621/TR

JAN1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

3,206
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JAN1N3612

JAN1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

8,804
RFQ
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 300 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5614

JANTX1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

8,285
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5419/TR

1N5419/TR

DIODE GEN PURP 500V 3A B SQ-MELF

Microchip Technology

5,014
RFQ
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
STPSC10H065DLF

STPSC10H065DLF

DIODE SIL CARB 650V 10A PWRFLAT

STMicroelectronics

6,027
RFQ
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 595pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
1N5803/TR

1N5803/TR

DIODE GEN PURP 75V 1A

Microchip Technology

9,496
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 75 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JAN1N4249/TR

JAN1N4249/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

3,399
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 1 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5805/TR

1N5805/TR

DIODE GEN PURP 125V 1A

Microchip Technology

2,507
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 125 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 125°C
1N5804/TR

1N5804/TR

DIODE GEN PURP 100V 1A

Microchip Technology

8,341
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
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