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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N485A/TR DIODE GEN PURP 180V 100MA DO7 Microchip Technology	7,930	RFQ	-	-	DO-204AA, DO-7, Axial	Tape & Reel (TR)	Active	Standard	180 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
1N485/TR DIODE GEN PURP 180V 100MA DO7 Microchip Technology	5,048	RFQ	-	-	DO-204AA, DO-7, Axial	Tape & Reel (TR)	Active	Standard	180 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
DSC10065 DIODE SIL CARB 650V 10A TO220AC Diodes Incorporated	7,449	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	400pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
SCS306APC9 DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor	4,796	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	-	175°C (Max)
1N649UR-1/TR DIODE GP 600V 400MA DO213AA Microchip Technology	7,297	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	600 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 600 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
JAN1N3614 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	4,830	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
APT60D60SG DIODE GEN PURP 60A TO247 Microchip Technology	2,214	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	-	60A	1.8 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
1N4248/TR DIODE GEN PURP 800V 1A Microchip Technology	9,722	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 800 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	5,991	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
SCS304AMC DIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor	5,166	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
1N6677/TR DIODE SCHOTTKY 40V 200MA DO35 Microchip Technology	7,266	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 125°C
1N6677-1/TR DIODE SCHOTTKY 40V 200MA DO35 Microchip Technology	2,832	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 125°C
1N6677-1E3 DIODE SCHOTTKY 40V 200MA DO35 Microchip Technology	6,362	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 125°C
JAN1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	5,314	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JAN1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	5,484	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
RURU8060 DIODE GEN PURP 600V 80A TO218 onsemi	9,478	RFQ	Datasheet	-	TO-218-1	Tube	Obsolete	Standard	600 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-218	-
CD5817 DIODE SCHOTTKY 20V 1A DIE Microchip Technology	3,726	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Schottky	20 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
CD6857 DIODE SCHOTTKY 16V 35MA DIE Microchip Technology	9,121	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Schottky	16 V	35mA	750 mV @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	4.5pF @ 0V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 125°C
CD2810V DIODE SCHOTTKY 15V 35MA DIE Microchip Technology	8,424	RFQ	-	-	Die	Bulk	Active	Schottky	15 V	35mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	100 nA @ 15 V	1.2pF @ 0V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 125°C
JANHCB1N6642 DIODE GEN PURP 75V 300MA D AXIAL Microchip Technology	6,368	RFQ	-	-	D, Axial	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/394	Through Hole	D-5D	-65°C ~ 175°C

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