Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N5615/TR

JAN1N5615/TR

DIODE GEN PURP 200V 1A

Microchip Technology

7,069
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 200 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
CDLL5818/TR

CDLL5818/TR

DIODE SCHOTTKY 30V 1A DO213AB

Microchip Technology

2,875
RFQ
Datasheet - DO-213AB, MELF Tape & Reel (TR) Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 0.9pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 150°C
JANTX1N4246/TR

JANTX1N4246/TR

DIODE GEN PURP 400V 1A

Microchip Technology

7,927
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 400 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
SDP06S60

SDP06S60

DIODE SIL CARB 600V 6A TO220-3-1

Infineon Technologies

7,130
RFQ
Datasheet - TO-220-3 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz - - Through Hole PG-TO220-3-1 -55°C ~ 175°C
JAN1N5619

JAN1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

2,407
RFQ
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 800 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N4245

JANTX1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

5,824
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
CD5818

CD5818

DIODE SCHOTTKY 30V 1A DIE

Microchip Technology

3,901
RFQ
Datasheet - Die Tape & Reel (TR) Active Schottky 30 V 1A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
JANTX1N3600/TR

JANTX1N3600/TR

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

8,033
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - Military MIL-PRF-19500/231 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N5620/TR

1N5620/TR

DIODE GEN PURP 800V 1A

Microchip Technology

2,463
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
1N5621/TR

1N5621/TR

DIODE GEN PURP 800V 1A

Microchip Technology

2,215
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 800 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 500 nA @ 800 V 20pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
SDT06S60

SDT06S60

DIODE SIL CARB 600V 6A TO220-2-2

Infineon Technologies

9,690
RFQ
Datasheet CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SCS215AEC

SCS215AEC

DIODE SIL CARBIDE 650V 15A TO247

Rohm Semiconductor

7,941
RFQ
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz - - Through Hole TO-247 175°C (Max)
SCS215AGHRC

SCS215AGHRC

DIODE SIL CARB 650V 15A TO220AC

Rohm Semiconductor

6,299
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.55 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 600 V 550pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
1N486A

1N486A

ZENER DIODE

Microchip Technology

5,671
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JAN1N4153-1/TR

JAN1N4153-1/TR

DIODE GEN PURP 50V 150MA DO35

Microchip Technology

2,296
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 50 V 150mA 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/337 Through Hole DO-204AH (DO-35) -65°C ~ 200°C
1N5617/TR

1N5617/TR

DIODE GEN PURP 400V 1A

Microchip Technology

3,093
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N3595A-1/TR

JANTX1N3595A-1/TR

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,621
RFQ

-

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
LSIC2SD120A10

LSIC2SD120A10

DIODE SIL CARB 1.2KV 28A TO220AC

Littelfuse Inc.

6,363
RFQ
Datasheet Gen2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 28A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 582pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
1N5712-1/TR

1N5712-1/TR

DIODE SCHOTTKY 20V 75MA DO35

Microchip Technology

4,956
RFQ
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 20 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N486B

1N486B

DIODE GEN PURP 250V 200MA DO35

Microchip Technology

2,822
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 250 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 250 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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