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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMBG65R015M2HXTMA1SILICON CARBIDE MOSFET |
1,000 |
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Datasheet | CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 115A (Tc) | 15V, 20V | 18mOhm @ 64.2A, 18V | 5.6V @ 13mA | 79 nC @ 18 V | +23V, -7V | 2792 pF @ 400 V | - | 416W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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SCT3040KRHRC151200V, 55A, 4-PIN THD, TRENCH-ST |
395 |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NVHL025N065SC1SIC MOS TO247-3L 650V |
450 |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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NVH4L025N065SC1SIC MOS TO247-4L 650V |
882 |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IPQC60R010S7XTMA1MOSFET |
750 |
|
Datasheet | CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | - | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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NTHL019N60S5FSUPERFET5 FRFET, 19MOHM, TO-247- |
442 |
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Datasheet | SuperFET® V, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 19mOhm @ 37.5A,10V | 4.8V @ 15.7mA | 252 nC @ 10 V | ±30V | 13400 pF @ 400 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVH4L030N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
393 |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IMZA75R016M1HXKSA1SILICON CARBIDE MOSFET |
210 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tj) | 15V, 20V | 15mOhm @ 41.5A, 20V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMZA75R016M1HXKSA1SICFET N-CH 750V 89A PG-TO247-4 |
213 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tc) | 15V, 20V | 22mOhm @ 41.5A, 18V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IMW65R010M2HXKSA1IMW65R010M2HXKSA1 |
396 |
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Datasheet | CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 130A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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NVHL070N120M3SSIC MOS TO247-3L 70MOHM 1200V M3 |
410 |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IMZA65R010M2HXKSA1IMZA65R010M2HXKSA1 |
400 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 144A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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AIMBG120R020M1XTMA1SIC_DISCRETE |
864 |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 15mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 468W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
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IMZC120R012M2HXKSA1IMZC120R012M2HXKSA1 |
215 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 129A (Tc) | 15V, 18V | 12mOhm @ 57A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -7V | 4050 pF @ 800 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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APT1201R2BFLLGMOSFET N-CH 1200V 12A TO247 |
274 |
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Datasheet | POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | - | 1.25Ohm @ 6A, 10V | 5V @ 1mA | 100 nC @ 10 V | - | 2540 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
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IXFX32N80Q3MOSFET N-CH 800V 32A PLUS247-3 |
600 |
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Datasheet | HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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SCTH100N65G2-7AGSICFET N-CH 650V 95A H2PAK-7 |
876 |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 95A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 5mA | 162 nC @ 18 V | +22V, -10V | 3315 pF @ 520 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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NVHL015N065SC1SIC MOS TO247-3L 650V |
447 |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 163A (Tc) | 15V, 18V | 18mOhm @ 75A, 12V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 643W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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AIMZA75R008M1HXKSA1AUTOMOTIVE_SICMOS |
240 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 18 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-U02 |
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IMZA75R008M1HXKSA1SILICON CARBIDE MOSFET |
240 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 163A (Tc) | 15V, 20V | 7.2mOhm @ 90.3A, 20V | 5.6V @ 32.4mA | 178 nC @ 500 V | +23V, -5V | 6137 pF @ 500 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
