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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STH12N120K5-2AGAUTOMOTIVE-GRADE N-CHANNEL 1200 |
998 |
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Datasheet | MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | H2PAK-2 |
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GS-065-030-6-LL-MRGAN POWER TRANSISTOR |
195 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 40A (Tc) | 6V | 58mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
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IPWS65R022CFD7AXKSA1AUTOMOTIVE_COOLMOS PG-TO247-3 |
238 |
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Datasheet | CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±30V | 11659 pF @ 400 V | - | 446W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-31 |
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IPDQ60R025CFD7XTMA1HIGH POWER_NEW |
725 |
|
Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 25mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141 nC @ 10 V | ±20V | 5626 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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AIMZHN120R080M1TXKSA1SIC_DISCRETE |
233 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +23V, -5V | 671 pF @ 800 V | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
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SCT055HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
523 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 72mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | +22V, -10V | 721 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | HU3PAK |
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STY60NK30ZMOSFET N-CH 300V 60A MAX247 |
490 |
|
Datasheet | SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 100µA | 220 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
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NVH4L032N065M3SSIC MOS TO247-4L 32MOHM 650V M3S |
422 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 50A (Tc) | 15V, 18V | 44mOhm @ 15A, 18V | 4V @ 7.5mA | 55 nC @ 18 V | +22V, -8V | 1410 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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IMDQ75R027M1HXUMA1IMDQ75R027M1HXUMA1 |
708 |
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Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +20V, -2V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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NVH4L070N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
222 |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tc) | 18V | 87mOhm @ 15A, 18V | 4.4V @ 7mA | 57 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IPQC60R017S7XTMA1MOSFET |
750 |
|
Datasheet | CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IPDQ60R017S7XTMA1MOSFET |
695 |
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Datasheet | CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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SCT4026DWATL750V, 51A, 7-PIN SMD, TRENCH-STR |
946 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | - | - | Surface Mount | TO-263-7LA |
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AIMBG75R027M1HXTMA1AIMBG75R027M1HXTMA1 |
1,183 |
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- |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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NVH4L040N65S3FMOSFET N-CH 650V 65A TO247-4 |
448 |
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Datasheet | SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | - | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 160 nC @ 10 V | ±30V | 5665 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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IMW65R026M2HXKSA1IMW65R026M2HXKSA1 |
390 |
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Datasheet | CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 64A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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AIMDQ75R027M1HXUMA1AIMDQ75R027M1HXUMA1 |
671 |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 64A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPDQ60R017S7AXTMA1MOSFET |
750 |
|
Datasheet | CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMZC120R026M2HXKSA1IMZC120R026M2HXKSA1 |
215 |
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Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 69A (Tc) | 15V, 18V | 25mOhm @ 27A, 18V | 5.1V @ 8.6mA | 60 nC @ 18 V | +23V, -7V | 1990 pF @ 800 V | - | 289W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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IMZA75R027M1HXKSA1SILICON CARBIDE MOSFET |
239 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
