FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT5017BVRG

APT5017BVRG

MOSFET N-CH 500V 30A TO247

Microchip Technology

243
RFQ
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) - 170mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - - - Through Hole TO-247 [B]
NVH4L075N065SC1

NVH4L075N065SC1

SIC MOS TO247-4L 650V

onsemi

240
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 61 nC @ 18 V +22V, -8V 1196 pF @ 325 V - 148W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
SCTWA35N65G2V-4

SCTWA35N65G2V-4

DISCRETE

STMicroelectronics

600
RFQ
Datasheet - TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +18V, -5V 1370 pF @ 400 V - 240W (Tc) -55°C ~ 200°C (TJ) - - Through Hole TO-247-4
NTHL030N120M3S

NTHL030N120M3S

SILICON CARBIDE (SIC) MOSFET EL

onsemi

351
RFQ
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
IMW65R033M2HXKSA1

IMW65R033M2HXKSA1

IMW65R033M2HXKSA1

Infineon Technologies

369
RFQ
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMT40R015M2HXTMA1

IMT40R015M2HXTMA1

SIC-MOS

Infineon Technologies

1,942
RFQ
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
R6086YNZ4C13

R6086YNZ4C13

NCH 600V 86A, TO-247, POWER MOSF

Rohm Semiconductor

521
RFQ
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 86A (Tc) 10V, 12V 44mOhm @ 17A, 12V 6V @ 4.6mA 110 nC @ 10 V ±30V 5100 pF @ 100 V - 781W (Tc) 150°C (TJ) - - Through Hole TO-247G
IPDQ60R016CM8XTMA1

IPDQ60R016CM8XTMA1

IPDQ60R016CM8XTMA1

Infineon Technologies

720
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
SCT3080KRHRC15

SCT3080KRHRC15

1200V, 31A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

440
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IPDQ60R022S7AXTMA1

IPDQ60R022S7AXTMA1

MOSFET

Infineon Technologies

750
RFQ
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
NVHL060N090SC1

NVHL060N090SC1

SICFET N-CH 900V 46A TO247-3

onsemi

383
RFQ
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
SCT3060ARHRC15

SCT3060ARHRC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

446
RFQ
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
AIMZA75R040M1HXKSA1

AIMZA75R040M1HXKSA1

IGBT

Infineon Technologies

229
RFQ
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

Infineon Technologies

390
RFQ
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMBG40R015M2HXTMA1

IMBG40R015M2HXTMA1

SIC-MOS

Infineon Technologies

939
RFQ
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
SCT3060ARC15

SCT3060ARC15

650V, 39A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

427
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tj) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
SCT3080KRC15

SCT3080KRC15

1200V, 31A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

365
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tj) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
NVHL040N65S3HF

NVHL040N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 40MOH

onsemi

430
RFQ
Datasheet SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 157 nC @ 10 V ±30V 6655 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NTH4L030N120M3S

NTH4L030N120M3S

SILICON CARBIDE (SIC) MOSFET EL

onsemi

422
RFQ
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NVH040N65S3F

NVH040N65S3F

SF3 FRFET AUTO 40MOHM TO-247

onsemi

412
RFQ
Datasheet SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 153 nC @ 10 V ±30V 5875 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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