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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT060HU75G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
582 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 30A (Tc) | 15V, 18V | 78mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | 4.2V @ 1mA | 680 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | HU3PAK |
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IPZA60R016CM8XKSA1IPZA60R016CM8XKSA1 |
391 |
|
- |
CoolMOS™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 123A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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NVBG023N065M3SSIC MOS D2PAK-7L 23MOHM 650V M3S |
1,600 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 70A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1951 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
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NVHL060N065SC1SIC MOS TO247-3L 650V |
450 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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|
GS66502B-MRGS66502B-MR |
208 |
|
- |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.5A (Tc) | 6V | 260mOhm @ 2.25A, 6V | 2.6V @ 1.75mA | 1.6 nC @ 6 V | +7V, -10V | 60 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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AIMBG120R060M1XTMA1SIC_DISCRETE |
959 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 38A (Tc) | 18V, 20V | 75mOhm @ 13A, 20V | 5.1V @ 4.3mA | 32 nC @ 20 V | +23V, -5V | 880 pF @ 800 V | - | 202W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
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NVHL023N065M3SSIC MOS TO247-3L 23MOHM 650V M3S |
440 |
|
- |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 70A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1952 pF @ 400 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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SCTH35N65G2V-7AGSICFET N-CH 650V 45A H2PAK-7 |
1,000 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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IMTA65R020M2HXTMA1SILICON CARBIDE MOSFET |
371 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCT4026DWAHRTL750V, 51A, 7-PIN SMD, TRENCH-STR |
980 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 51A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | - | 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7LA |
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FCH029N65S3-F155MOSFET N-CH 650V 75A TO247-3 |
399 |
|
Datasheet | SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 29mOhm @ 37.5A, 10V | 4.5V @ 7mA | 201 nC @ 10 V | ±30V | 6340 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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IMW65R020M2HXKSA1SILICON CARBIDE MOSFET |
163 |
|
Datasheet | CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 83A (Tc) | 15V, 20V | 18mOhm @ 46.9A, 20V | 5.6V @ 9.5mA | 57 nC @ 18 V | +23V, -7V | 2038 pF @ 400 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IXFX120N30P3MOSFET N-CH 300V 120A PLUS247-3 |
240 |
|
Datasheet | HiPerFET™, Polar3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150 nC @ 10 V | ±20V | 8630 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IMBG40R011M2HXTMA1SIC-MOS |
1,000 |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 133A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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NTH4L018N075SC1SIC MOS TO247-4L 750V |
400 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A (Tc) | 15V, 18V | 18mOhm @ 66A, 18V | 4.3V @ 22mA | 262 nC @ 18 V | +22V, -8V | 5010 pF @ 375 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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NVH4L060N090SC1- |
1,349 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V, 18V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +22V, -8V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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NVH4L045N065SC1SIC MOS TO247-4L 650V |
422 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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SCTW60N120G2DISCRETE |
600 |
|
Datasheet | - | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 18V | 5V @ 1mA | 94 nC @ 8 V | +18V, -5V | 1969 pF @ 800 V | - | 389W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
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AIMZA75R027M1HXKSA1IGBT |
216 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IPDQ60R020CFD7XTMA1HIGH POWER_NEW |
750 |
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Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 112A (Tc) | 10V | 20mOhm @ 42.4A, 10V | 4.5V @ 2.12mA | 186 nC @ 10 V | ±20V | 7395 pF @ 400 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
