Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JANTXV1N5418US/TR

JANTXV1N5418US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

5,984
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5617US

JANTXV1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

4,046
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5617US/TR

JANTXV1N5617US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

2,233
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
JAN1N3645

JAN1N3645

DIODE GP 1.4KV 250MA S AXIAL

Microchip Technology

5,026
RFQ
Datasheet - S, Axial Bulk Active Standard 1400 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1400 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
JAN1N3646

JAN1N3646

DIODE GP 1.75KV 250MA S AXIAL

Microchip Technology

8,434
RFQ
Datasheet - S, Axial Bulk Active Standard 1750 V 250mA 5 V @ 250 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1750 V - Military MIL-PRF-19500/279 Through Hole S, Axial -65°C ~ 175°C
1N4254

1N4254

RECTIFIER DIODE

Microchip Technology

9,093
RFQ
Datasheet - S, Axial Bulk Active Standard 1500 V 250mA 3.5 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1500 V - - - Through Hole S, Axial -65°C ~ 175°C
JANTX1N6073

JANTX1N6073

DIODE GEN PURP 50V 850MA A-PAK

Microchip Technology

2,160
RFQ
Datasheet - A, Axial Bulk Active Standard 50 V 850mA 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
JANTXV1N3595UR-1

JANTXV1N3595UR-1

DIODE GP 125V 150MA DO213AA

Microchip Technology

5,524
RFQ
Datasheet - DO-213AA Bulk Discontinued at Digi-Key Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
PCFFS30120AF

PCFFS30120AF

DIODE SIL CARB 1.2KV WAFER DIE

onsemi

3,142
RFQ
Datasheet - Die Tray Active SiC (Silicon Carbide) Schottky 1200 V 46A 1.75 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1740pf @ 1V, 100kHz - - Surface Mount Die -55°C ~ 175°C
JANTX1N6622US

JANTX1N6622US

DIODE GEN PURP 660V 2A D-5A

Microchip Technology

5,137
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 660 V 2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6622U

JANTX1N6622U

DIODE GEN PURP 600V 1.2A D-5A

Microchip Technology

6,259
RFQ

-

- SQ-MELF, A Bulk Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 600 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
STPSC1006G-TR

STPSC1006G-TR

DIODE SIL CARBIDE 600V 10A D2PAK

STMicroelectronics

5,886
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 650pF @ 0V, 1MHz - - Surface Mount D2PAK -40°C ~ 175°C
JANTXV1N3595UR-1/TR

JANTXV1N3595UR-1/TR

DIODE GP 125V 150MA DO213AA

Microchip Technology

8,652
RFQ

-

- DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
UES1105E3

UES1105E3

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

2,055
RFQ

-

- Axial Bulk Active Standard 300 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - - - Through Hole A, Axial -55°C ~ 150°C
UES1105E3/TR

UES1105E3/TR

DIODE GEN PURP 300V 1A A AXIAL

Microchip Technology

9,470
RFQ

-

- Axial Tape & Reel (TR) Active Standard 300 V 1A 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - - - Through Hole A, Axial -55°C ~ 150°C
1N6540

1N6540

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

7,185
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
1N6625E3/TR

1N6625E3/TR

DIODE GEN PURP 1.1KV 1A A AXIAL

Microchip Technology

5,514
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1A 1.95 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1100 V - - - Through Hole A, Axial -65°C ~ 150°C
JANTX1N6622US/TR

JANTX1N6622US/TR

DIODE GEN PURP 660V 2A D-5A

Microchip Technology

4,018
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 660 V 2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V 10pF @ 10V, 1MHz Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
JANTX1N6622U/TR

JANTX1N6622U/TR

DIODE GP 660V 1.2A A SQ-MELF

Microchip Technology

9,545
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 660 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 660 V - Military MIL-PRF-19500/585 Surface Mount A, SQ-MELF -65°C ~ 150°C
SIDC78D170HX1SA1

SIDC78D170HX1SA1

DIODE GP 1.7KV 150A WAFER

Infineon Technologies

9,675
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1700 V 150A 1.8 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
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