Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N6073US

1N6073US

DIODE GEN PURP 50V 3A D-5A

Microchip Technology

7,348
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 50 V 3A 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 50 V - - - Surface Mount D-5A -65°C ~ 155°C
1N6075US

1N6075US

DIODE GEN PURP 150V 3A D-5A

Microchip Technology

8,965
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 3A 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - - - Surface Mount D-5A -65°C ~ 155°C
1N6625E3

1N6625E3

DIODE GEN PURP 1.1KV 1A A AXIAL

Microchip Technology

3,021
RFQ

-

- A, Axial Bulk Discontinued at Digi-Key Standard 1100 V 1A 1.95 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 1 µA @ 1000 V - - - Through Hole A, Axial -65°C ~ 150°C
JANTX1N6075

JANTX1N6075

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

6,755
RFQ
Datasheet - A, Axial Bulk Active Standard 150 V 850mA 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
IDY15S120XKSA1

IDY15S120XKSA1

DIODE SIC 1.2KV 7.5A TO247HC-3

Infineon Technologies

6,713
RFQ
Datasheet CoolSiC™+ TO-247-3 Variant Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 7.5A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V 375pF @ 1V, 1MHz - - Through Hole PG-TO247HC-3 -55°C ~ 150°C
SIDC105D120H8X1SA1

SIDC105D120H8X1SA1

DIODE GP 1.2KV 200A WAFER

Infineon Technologies

3,299
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1200 V 200A 1.41 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
JANTXV1N6623

JANTXV1N6623

DIODE GEN PURP 880V 1A A-PAK

Microchip Technology

2,482
RFQ
Datasheet - A, Axial Bulk Active Standard 880 V 1A 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
1N6075US/TR

1N6075US/TR

DIODE GEN PURP 150V 3A D-5A

Microchip Technology

7,391
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 3A 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - - - Surface Mount D-5A -65°C ~ 155°C
JANTXV1N6625

JANTXV1N6625

DIODE GEN PURP 1.1KV 1A A-PAK

Microchip Technology

3,510
RFQ
Datasheet - A, Axial Bulk Discontinued at Digi-Key Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6627

JANTXV1N6627

DIODE GEN PURP 440V 1.75A AXIAL

Microchip Technology

9,379
RFQ
Datasheet - E, Axial Bulk Discontinued at Digi-Key Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N6622

JANTXV1N6622

DIODE GEN PURP 660V 1.2A AXIAL

Microchip Technology

2,365
RFQ
Datasheet - A, Axial Bulk Discontinued at Digi-Key Standard 660 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTX1N6075/TR

JANTX1N6075/TR

DIODE GEN PURP 150V 850MA A-PAK

Microchip Technology

5,686
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 150 V 850mA 2.04 V @ 9.4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - Military MIL-PRF-19500/503 Through Hole A-PAK -65°C ~ 155°C
IDC20S120C5X1SA1

IDC20S120C5X1SA1

IC DIODE EMITTER CTLR WAFER

Infineon Technologies

3,339
RFQ

-

- Die Bulk Active - - - - - - - - - - Surface Mount Sawn on foil -
JANTXV1N6622/TR

JANTXV1N6622/TR

DIODE GEN PURP 660V 1.2A

Microchip Technology

3,019
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 660 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 660 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6625/TR

JANTXV1N6625/TR

DIODE GEN PURP 1.1KV 1A A-PAK

Microchip Technology

3,393
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1100 V 1A 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 1 µA @ 1100 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6623/TR

JANTXV1N6623/TR

DIODE GEN PURP 880V 1A A-PAK

Microchip Technology

5,908
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 880 V 1A 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6621/TR

JANTXV1N6621/TR

DIODE GEN PURP 440V 1.2A

Microchip Technology

9,364
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V - Military MIL-PRF-19500/585 Through Hole A, Axial -65°C ~ 150°C
JANTXV1N6627/TR

JANTXV1N6627/TR

DIODE GEN PURP 440V 1.75A

Microchip Technology

3,094
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTX1N6627US

JANTX1N6627US

DIODE GEN PURP 440V 1.75A D-5B

Microchip Technology

9,380
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 440 V 1.75A 1.35 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 440 V 40pF @ 10V, 1MHz Military MIL-PRF-19500/590 Surface Mount D-5B -65°C ~ 150°C
JANTXV1N6621US

JANTXV1N6621US

DIODE GEN PURP 440V 1.2A D-5A

Microchip Technology

3,618
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V - Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
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