Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
LSIC2SD120D15

LSIC2SD120D15

DIODE SIL CARB 1.2KV 44A TO263L

Littelfuse Inc.

4,530
RFQ
Datasheet Gen2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 44A 1.8 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 920pF @ 1V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
LSIC2SD120A20A

LSIC2SD120A20A

DIODE SIC 1.2KV 54.5A TO220L

Littelfuse Inc.

2,730
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 54.5A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1142pF @ 1V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
1N6622E3

1N6622E3

DIODE A AXIAL

Microchip Technology

6,063
RFQ

-

- A, Axial Bulk Active - - - 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole A, Axial -
1N6622/TR

1N6622/TR

DIODE GEN PURP 600V 1.2A A-PAK

Microchip Technology

4,123
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 600 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - - - Through Hole A, Axial -65°C ~ 150°C
1N6621/TR

1N6621/TR

DIODE GEN PURP 440V 1.2A

Microchip Technology

8,428
RFQ
Datasheet - A, Axial Tape & Reel (TR) Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 150°C
SIDC59D170HX1SA2

SIDC59D170HX1SA2

DIODE GP 1.7KV 100A WAFER

Infineon Technologies

3,772
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1700 V 100A 1.8 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1700 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
JANTXV1N5616

JANTXV1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,575
RFQ
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N6631/TR

JAN1N6631/TR

DIODE GEN PURP 1.1KV 1.4A

Microchip Technology

8,559
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 1100 V 1.4A 1.6 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 1100 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6628/TR

JAN1N6628/TR

DIODE GEN PURP 660V 1.75A

Microchip Technology

2,073
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 660 V 1.75A 1.35 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 µA @ 600 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 175°C
JAN1N6630/TR

JAN1N6630/TR

DIODE GEN PURP 900V 1.4A

Microchip Technology

6,688
RFQ

-

- E, Axial Tape & Reel (TR) Active Standard 900 V 1.4A 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 2 µA @ 900 V - Military MIL-PRF-19500/590 Through Hole - -65°C ~ 150°C
JANTXV1N5616/TR

JANTXV1N5616/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,219
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6547

1N6547

DIODE RECT ULT FAST REC A-PKG

Microchip Technology

8,033
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JANTXV1N3595US

JANTXV1N3595US

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,897
RFQ

-

- SQ-MELF, B Bulk Active Standard 125 V 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTX1N5420US/TR

JANTX1N5420US/TR

DIODE GEN PURP 600V 3A D-5B

Microchip Technology

4,171
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N6623US

1N6623US

DIODE GEN PURP 880V 1A A-MELF

Microchip Technology

9,166
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 880 V 1A 1.55 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 880 V 10pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6623U

1N6623U

DIODE GP 800V 1.5A A SQ-MELF

Microchip Technology

7,316
RFQ

-

- SQ-MELF, A Bulk Active Standard 800 V 1.5A 1.8 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 nA @ 800 V - - - Surface Mount A, SQ-MELF -65°C ~ 175°C
1N6622E3/TR

1N6622E3/TR

DIODE A AXIAL

Microchip Technology

7,082
RFQ

-

- A, Axial Tape & Reel (TR) Active - - - 1.6 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - - - Through Hole A, Axial -
GATELEAD28134XPSA1

GATELEAD28134XPSA1

DUMMY 57

Infineon Technologies

3,463
RFQ

-

- - Tray Active - - - - - - - - - - - - -
IDC73D120T6MX1SA2

IDC73D120T6MX1SA2

DIODE GP 1.2KV 150A WAFER

Infineon Technologies

2,069
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key Standard 1200 V 150A 2.05 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 26 µA @ 1200 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
FFSH5065A

FFSH5065A

DIODE SIL CARB 650V 60A TO247-2

onsemi

5,579
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 60A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 2530pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
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