Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UTR3310

UTR3310

DIODE GEN PURP 100V 3A B AXIAL

Microchip Technology

4,275
RFQ

-

- B, Axial Bulk Active Standard 100 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 100 V 400pF @ 0V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
UTX225

UTX225

DIODE GEN PURP 250V 2A A AXIAL

Microchip Technology

3,430
RFQ

-

- A, Axial Bulk Active Standard 250 V 2A 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 3 µA @ 250 V - - - Through Hole A, Axial -195°C ~ 175°C
UTR4360

UTR4360

DIODE GEN PURP 600V 4A B AXIAL

Microchip Technology

2,325
RFQ

-

- B, Axial Bulk Active Standard 600 V 4A 1.1 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 5 µA @ 600 V 160pF @ 0V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5623

JANTXV1N5623

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

7,336
RFQ
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1000 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N5807US/TR

JANTXV1N5807US/TR

DIODE GEN PURP 50V 3A D-5B

Microchip Technology

3,704
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5623/TR

JANTXV1N5623/TR

DIODE GEN PURP 1KV 1A

Microchip Technology

2,513
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 1000 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 500 nA @ 1 V 15pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5622US/TR

JANTX1N5622US/TR

DIODE GEN PURP 1KV 1A D-5A

Microchip Technology

4,587
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
1N4256SM

1N4256SM

DIODE GP 2.5KV 250MA S SQ-MELF

Microchip Technology

8,796
RFQ
Datasheet - SQ-MELF, S Bulk Active Standard 2500 V 250mA 3.5 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 2500 V - - - Surface Mount S, SQ-MELF -65°C ~ 175°C
1N4255SM

1N4255SM

DIODE GP 2KV 250MA S SQ-MELF

Microchip Technology

4,221
RFQ
Datasheet - SQ-MELF, S Bulk Active Standard 2000 V 250mA 3.5 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 2000 V - - - Surface Mount S, SQ-MELF -65°C ~ 175°C
JANTX1N5419US

JANTX1N5419US

DIODE GEN PURP 500V 3A D-5B

Microchip Technology

8,719
RFQ
Datasheet - SQ-MELF, E Bulk Discontinued at Digi-Key Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 1 µA @ 500 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
UT4040

UT4040

DIODE GEN PURP 400V 4A B

Microchip Technology

4,933
RFQ

-

- Axial Bulk Active Standard 400 V 4A 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - - - Through Hole B -195°C ~ 175°C
1N4948US

1N4948US

DIODE GEN PURP 1KV 1A D-5C

Microchip Technology

4,507
RFQ

-

- SQ-MELF, C Bulk Active Standard 1000 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 1 µA @ 1000 V 15pF @ 12V, 1MHz - - Surface Mount D-5C -55°C ~ 175°C
JANTXV1N5416US

JANTXV1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

6,588
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - Military MIL-PRF-19500/411 Surface Mount D-5B -65°C ~ 175°C
1N4942US

1N4942US

DIODE GEN PURP 200V 1A A SQ-MELF

Microchip Technology

7,462
RFQ

-

- SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V 45pF @ 12V, 1MHz - - Surface Mount A, SQ-MELF -65°C ~ 175°C
JANTX1N3595US

JANTX1N3595US

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

7,547
RFQ

-

- SQ-MELF, B Bulk Active Standard - 200mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
1N6857UR-1/TR

1N6857UR-1/TR

DIODE SCHOTTKY 16V 150MA DO213AA

Microchip Technology

7,083
RFQ

-

- DO-213AA Tape & Reel (TR) Active Schottky 16 V 150mA 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
UTR3310/TR

UTR3310/TR

DIODE GP REV 100V 3A B AXIAL

Microchip Technology

3,350
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 100 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 100 V 400pF @ 0V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
UTR3305/TR

UTR3305/TR

DIODE GP REV 50V 3A B AXIAL

Microchip Technology

9,498
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 50 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 50 V 600pF @ 0V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
1N6620US

1N6620US

DIODE GEN PURP 220V 1.2A A-MELF

Microchip Technology

3,444
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 220 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 220 V 10pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
1N6621U

1N6621U

DIODE GP 440V 1.2A A SQ-MELF

Microchip Technology

2,727
RFQ

-

- SQ-MELF, A Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 440 V - - - Surface Mount A, SQ-MELF -65°C ~ 150°C
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