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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JAN1N5553US/TR DIODE GEN PURP 800V 3A D-5B Microchip Technology	4,837	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	800 V	3A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	Military	MIL-PRF-19500/420	Surface Mount	D-5B	-65°C ~ 175°C
JAN1N5552US/TR DIODE GEN PURP 600V 3A D-5B Microchip Technology	2,044	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Surface Mount	D-5B	-65°C ~ 175°C
JANTXV1N4942/TR DIODE GEN PURP 200V 1A Microchip Technology	9,709	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	45pF @ 12V, 1MHz	Military	MIL-PRF-19500/359	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N4944/TR DIODE GEN PURP 400V 1A Microchip Technology	8,413	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	35pF @ 12V, 1MHz	Military	MIL-PRF-19500/359	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	2,941	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
LSIC2SD120A20 DIODE SIC 1.2KV 54.5A TO220AC Littelfuse Inc.	3,466	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	54.5A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1142pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
LSIC2SD120E20CC DIODE SIL CARB 1.2KV 28A TO247AD Littelfuse Inc.	6,505	RFQ	Datasheet	Gen2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	28A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	582pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
JANTXV1N6638US DIODE GP 125V 300MA B SQ-MELF Microchip Technology	7,131	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	-	-	Military	MIL-PRF-19500/578	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5819UR-1/TR DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	5,268	RFQ	Datasheet	-	DO-213AB, MELF (Glass)	Tape & Reel (TR)	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Military	MIL-PRF-19500/586	Surface Mount	DO-213AB (MELF, LL41)	-65°C ~ 125°C
1N5418E3/TR DIODE GEN PURP 400V 3A B AXIAL Microchip Technology	2,950	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N5419E3/TR DIODE GEN PURP 500V 3A Microchip Technology	4,944	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
UT4010 DIODE GEN PURP 100V 4A B Microchip Technology	5,869	RFQ	-	-	Axial	Bulk	Active	Standard	100 V	4A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	-	-	-	Through Hole	B	-195°C ~ 175°C
JAN1N5622US/TR DIODE GEN PURP 1KV 1A D-5A Microchip Technology	2,245	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
JANTXV1N5416 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	4,257	RFQ	Datasheet	-	B, Axial	Bulk	Discontinued at Digi-Key	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JANTXV1N5614US/TR DIODE GEN PURP 200V 1A D-5A Microchip Technology	4,552	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
1N5804USE3/TR DIODE GEN PURP 100V 1A A SQ-MELF Microchip Technology	2,458	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	-	-	Surface Mount	A, SQ-MELF	-65°C ~ 175°C
JAN1N5711UR-1 DIODE SCHOTTKY 70V 33MA DO213AA Microchip Technology	3,902	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Surface Mount	DO-213AA	-65°C ~ 150°C
JANTX1N5621US DIODE GEN PURP 800V 1A D-5A Microchip Technology	8,446	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 800 V	20pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Surface Mount	D-5A	-65°C ~ 175°C
JANTX1N5623 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	9,322	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1000 V	15pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N5415 DIODE GEN PURP 50V 3A AXIAL Microchip Technology	8,157	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	50 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 50 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C

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