Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UTR42/TR

UTR42/TR

DIODE GEN PURP 400V 2A A AXIAL

Microchip Technology

5,624
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 400 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 3 µA @ 400 V 60pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
UTR62/TR

UTR62/TR

DIODE GEN PURP 600V 2A A AXIAL

Microchip Technology

8,765
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 3 µA @ 600 V 40pF @ 0V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N6640US/TR

1N6640US/TR

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

8,954
RFQ

-

- SQ-MELF, D Tape & Reel (TR) Active Standard 75 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
JANTX1N5614US/TR

JANTX1N5614US/TR

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

8,474
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - Military MIL-PRF-19500/437 Surface Mount D-5A -65°C ~ 200°C
SIDC24D30SIC3

SIDC24D30SIC3

DIODE SIL CARB 300V 10A WAFER

Infineon Technologies

8,127
RFQ
Datasheet - Die Bulk Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 300 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 300 V 600pF @ 1V, 1MHz - - Surface Mount Sawn on foil -55°C ~ 175°C
JAN1N5188

JAN1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,105
RFQ
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5189

JAN1N5189

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

4,148
RFQ
Datasheet - B, Axial Bulk Active Standard 500 V 3A 2 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5619/TR

JANTXV1N5619/TR

DIODE GEN PURP 600V 1A

Microchip Technology

8,422
RFQ

-

- A, Axial Tape & Reel (TR) Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
1N6677UR-1/TR

1N6677UR-1/TR

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

3,667
RFQ

-

- DO-213AA Tape & Reel (TR) Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 125°C
JAN1N5417US/TR

JAN1N5417US/TR

DIODE GEN PURP 200V 3A B SQ-MELF

Microchip Technology

7,070
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Surface Mount B, SQ-MELF -65°C ~ 175°C
SDT12S60

SDT12S60

DIODE SIL CARB 600V 12A TO220-2

Infineon Technologies

9,923
RFQ
Datasheet CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 600 V 450pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SCS215KGHRC

SCS215KGHRC

DIODE SIL CARB 1.2KV 15A TO220AC

Rohm Semiconductor

2,391
RFQ
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 300 µA @ 1200 V 790pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC 175°C (Max)
JANTXV1N5618US

JANTXV1N5618US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

8,511
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N6642U

JANTXV1N6642U

DIODE GEN PURP 100V 300MA D-5D

Microchip Technology

9,383
RFQ
Datasheet - SQ-MELF, D Bulk Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
1N5803US

1N5803US

DIODE GEN PURP 80V 1A D-5A

Microchip Technology

3,380
RFQ

-

- SQ-MELF, A Bulk Active Standard 80 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 75 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
1N5805US

1N5805US

DIODE GEN PURP 135V 1A D-5A

Microchip Technology

2,755
RFQ

-

- SQ-MELF, A Bulk Active Standard 135 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 125 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5550

JANTXV1N5550

DIODE GEN PURP 200V 5A AXIAL

Microchip Technology

9,635
RFQ
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5189/TR

JAN1N5189/TR

DIODE GEN PURP 500V 3A B AXIAL

Microchip Technology

5,911
RFQ

-

- B, Axial Tape & Reel (TR) Active Standard 500 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 500 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N5188/TR

JAN1N5188/TR

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

6,652
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 2 µA @ 400 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JAN1N3595AUS

JAN1N3595AUS

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,525
RFQ

-

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - Military MIL-PRF-19500/241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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