Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
JAN1N3595US

JAN1N3595US

DIODE GEN PURP 125V 4A B SQ-MELF

Microchip Technology

5,671
RFQ

-

- SQ-MELF, B Bulk Active Standard 125 V 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs - - Military MIL-PRF-19500/241 Surface Mount B, SQ-MELF -65°C ~ 150°C
JANTXV1N5186

JANTXV1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

9,779
RFQ
Datasheet - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 100 V - Military MIL-PRF-19500/424 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5619US

JANTXV1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

5,665
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V - Military MIL-PRF-19500/429 Surface Mount D-5A -65°C ~ 175°C
1N6641US

1N6641US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

5,544
RFQ
Datasheet - SQ-MELF, D Bulk Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
JANTX1N5802

JANTX1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

8,722
RFQ

-

- A, Axial Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5417US

1N5417US

DIODE GEN PURP 200V 3A D5B

Microchip Technology

8,980
RFQ
Datasheet - SQ-MELF, E Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Surface Mount D-5B -65°C ~ 175°C
CD5822

CD5822

DIODE SCHOTTKY 40V 3A DIE

Microchip Technology

8,733
RFQ
Datasheet - Die Tape & Reel (TR) Active Schottky 40 V 3A 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Surface Mount Die -65°C ~ 125°C
JANTXV1N5551

JANTXV1N5551

DIODE GEN PURP 400V 5A

Microchip Technology

6,725
RFQ
Datasheet - B, Axial Bulk Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JAN1N5804US

JAN1N5804US

DIODE GEN PURP 100V 2.5A D-5A

Microchip Technology

5,428
RFQ
Datasheet - SQ-MELF, A Bulk Discontinued at Digi-Key Standard 100 V 2.5A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5804

JANTXV1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology

7,835
RFQ

-

- A, Axial Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N5806

JANTXV1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

9,536
RFQ

-

- A, Axial Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JANTXV1N6642U/TR

JANTXV1N6642U/TR

DIODE GEN PURP 100V 300MA D-5D

Microchip Technology

6,177
RFQ

-

- SQ-MELF, D Tape & Reel (TR) Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N5618US/TR

JANTXV1N5618US/TR

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

8,276
RFQ

-

- SQ-MELF, A Tape & Reel (TR) Active Standard 600 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
JANTXV1N6642US/TR

JANTXV1N6642US/TR

DIODE GEN PURP 100V 300MA D-5B

Microchip Technology

4,849
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 100 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 100 V - Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
JANTXV1N5550/TR

JANTXV1N5550/TR

DIODE GEN PURP 200V 5A

Microchip Technology

5,418
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5551/TR

JANTXV1N5551/TR

DIODE GEN PURP 400V 5A

Microchip Technology

2,545
RFQ
Datasheet - B, Axial Tape & Reel (TR) Active Standard 400 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
1N5418US/TR

1N5418US/TR

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

4,977
RFQ

-

- SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N5417US/TR

1N5417US/TR

DIODE GEN PURP 200V 3A D-5B

Microchip Technology

7,271
RFQ

-

- SQ-MELF, E Tape & Reel (TR) Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - - - Surface Mount D-5B -65°C ~ 175°C
1N5418USE3

1N5418USE3

UFR,FRR

Microchip Technology

3,427
RFQ
Datasheet - SQ-MELF, B Bulk Active - - - - - - - - - - Surface Mount B, SQ-MELF -
MSC030SDA120K

MSC030SDA120K

DIODE SIL CARB 1.2KV 30A TO220

Microchip Technology

9,321
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 70A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 141pF @ 400V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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