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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC4H065DLF DIODE SIL CARB 650V 4A POWERFLAT STMicroelectronics	2,739	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.55 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	245pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
STPSC8H065G-TR DIODE SIL CARBIDE 650V 8A D2PAK STMicroelectronics	6,436	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STTH30RQ06WL DIODE GEN PURP 600V 30A DO247 LL STMicroelectronics	19	RFQ	Datasheet	ECOPACK®2	TO-247-2	Tube	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Through Hole	DO-247 LL	175°C (Max)
STPSC8H065G2Y-TR DIODE SIL CARB 650V 8A D2PAK HV STMicroelectronics	5,822	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.65 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
STTH30S12W DIODE GEN PURP 1.2KV 30A DO247 STMicroelectronics	7,093	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	30A	2.9 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	15 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
STTH3010WY DIODE GEN PURP 1KV 30A DO247-2 STMicroelectronics	9,611	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	Automotive	AEC-Q101	Through Hole	-	-40°C ~ 175°C
D8015L56TP DIODE GP 800V 9.5A ITO220AB Littelfuse Inc.	3,887	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	800 V	9.5A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	20 µA @ 800 V	-	-	-	Through Hole	ITO-220AB	-40°C ~ 125°C
STPSC10H065D 650 V 10 A power Schottky silico STMicroelectronics	4,606	RFQ	Datasheet	-	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC12065G-TR DIODE SIL CARBIDE 650V 12A D2PAK STMicroelectronics	9,367	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STTH60P03SW DIODE GEN PURP 300V 60A TO247-3 STMicroelectronics	7	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	300 V	60A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 300 V	-	-	-	Through Hole	TO-247-3	175°C (Max)
DSC02120FP DIODE SIL CARB 1.2KV 2A ITO220AC Diodes Incorporated	24	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	128 µA @ 1200 V	132pF @ 100mV, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
SCS215AGC17 DIODE SIC 650V 15A TO220ACFP Rohm Semiconductor	9,898	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	8,521	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
AIDK10S65C5ATMA1 DISCRETE DIODES Infineon Technologies	2,909	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	303pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
SCS212AGC17 DIODE SIC 650V 12A TO220ACFP Rohm Semiconductor	4,198	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
DSC05120FP DIODE SIL CARB 1.2KV 5A ITO220AC Diodes Incorporated	2,034	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	318pF @ 100mV, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
STTH3006DPI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	3,576	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	40 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
STPSC20065W DIODE SIL CARBIDE 650V 20A DO247 STMicroelectronics	9,781	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
1N6622US DIODE GEN PURP 660V 1.2A A-MELF Microchip Technology	5,542	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	660 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
JANHCA1N5819 DIODE SCHOTTKY 45V 1A DO41 Microchip Technology	2,541	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Military	MIL-PRF-19500/586	Through Hole	DO-41	-55°C ~ 110°C

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