Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
NRVTSM260EV2T1G

NRVTSM260EV2T1G

DIODE SCHOTTKY 60V 2A POWERMITE

onsemi

31
RFQ
Datasheet - DO-216AA Tape & Reel (TR) Active Schottky 60 V 2A 650 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 12 µA @ 60 V - Automotive AEC-Q101 Surface Mount Powermite -65°C ~ 175°C
RB168LAM-40TFTR

RB168LAM-40TFTR

DIODE SCHOTTKY 40V 1A PMDTM

Rohm Semiconductor

4,041
RFQ
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 40 V 1A - Fast Recovery =< 500ns, > 200mA (Io) - 500 nA @ 40 V - Automotive AEC-Q101 Surface Mount PMDTM 150°C (Max)
RGF1G

RGF1G

DIODE GEN PURP 400V 1A DO214AC

onsemi

4,026
RFQ
Datasheet - DO-214AC, SMA Tape & Reel (TR) Active Standard 400 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 8.5pF @ 4V, 1MHz - - Surface Mount DO-214AC (SMA) -65°C ~ 175°C
RFN2VWM2STR

RFN2VWM2STR

DIODE GEN PURP 200V 2A PMDE

Rohm Semiconductor

13
RFQ
Datasheet - 2-SMD, Flat Leads Tape & Reel (TR) Active Standard 200 V 2A 990 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - - - Surface Mount PMDE 175°C
MBR1060G

MBR1060G

DIODE SCHOTTKY 60V 10A TO220-2

onsemi

5,296
RFQ
Datasheet SWITCHMODE™ TO-220-2 Tube Active Schottky 60 V 10A 800 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V - - - Through Hole TO-220-2 -65°C ~ 175°C
MUR1540G

MUR1540G

DIODE GEN PURP 400V 15A TO220-2

onsemi

6,773
RFQ
Datasheet SWITCHMODE™ TO-220-2 Tube Active Standard 400 V 15A 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 400 V - - - Through Hole TO-220-2 -65°C ~ 175°C
JAN1N4245

JAN1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

5,269
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5617

1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

4,490
RFQ
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N5617

JANTX1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,740
RFQ
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N4942

JANTX1N4942

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,776
RFQ
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
JANTX1N3612

JANTX1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2
RFQ
Datasheet - A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5552

JANTX1N5552

DIODE GEN PURP 600V 5A AXIAL

Microchip Technology

8,662
RFQ
Datasheet - B, Axial Bulk Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5622

JANTX1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,981
RFQ
Datasheet - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5619US

1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

4,921
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
1N5811

1N5811

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

9
RFQ
Datasheet - B, Axial Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5806US

JANTX1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

7,663
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N5811US/TR

1N5811US/TR

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

2
RFQ
Datasheet - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
MSC030SDA070S

MSC030SDA070S

DIODE SIL CARBIDE 700V 60A D3PAK

Microchip Technology

24
RFQ
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 700 V 60A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V - - - Surface Mount D3PAK -55°C ~ 175°C
IDWD15G120C5XKSA1

IDWD15G120C5XKSA1

DIODE SIL CARB 1.2KV 49A TO247-2

Infineon Technologies

18
RFQ
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.65 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 124 µA @ 1200 V 1050pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
JANTX1N5420

JANTX1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

5,551
RFQ
Datasheet - B, Axial Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
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