Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SCS208AJTLL

SCS208AJTLL

DIODE SIL CARB 650V 8A TO263AB

Rohm Semiconductor

39
RFQ
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.55 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 291pF @ 1V, 1MHz - - Surface Mount TO-263AB 175°C (Max)
1N5811E3

1N5811E3

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

88
RFQ
Datasheet - B, Axial Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JAN1N5711UR-1/TR

JAN1N5711UR-1/TR

DIODE SCHOTTKY 70V 33MA DO213AA

Microchip Technology

100
RFQ

-

- DO-213AA Tape & Reel (TR) Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount DO-213AA -65°C ~ 150°C
FFSH5065A-F155

FFSH5065A-F155

DIODE SIL CARB 650V 60A TO247-3

onsemi

93
RFQ
Datasheet - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 60A - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 2530pF @ 1V, 100kHz - - Through Hole TO-247-3 -55°C ~ 175°C
UES1102SM

UES1102SM

DIODE GEN PURP 100V 2.5A A-MELF

Microchip Technology

90
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 100 V 2.5A - Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V 3.5pF @ 6V, 1MHz - - Surface Mount A-MELF 150°C (Max)
JANS1N5806

JANS1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

18
RFQ

-

- A, Axial Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
S3480

S3480

DIODE GEN PURP 800V 45A DO203AB

Microchip Technology

10
RFQ
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 800 V 45A 1.15 V @ 90 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 800 V - - - Stud Mount DO-203AB (DO-5) -65°C ~ 200°C
JANTX1N3070-1

JANTX1N3070-1

DIODE GEN PURP 175V 100MA DO7

Microchip Technology

3
RFQ
Datasheet - DO-204AA, DO-7, Axial Bulk Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - Military MIL-PRF-19500/169 Through Hole DO-7 -65°C ~ 175°C
ND260N16KHPSA1

ND260N16KHPSA1

DIODE GP 1.6KV 260A PB50ND-1

Infineon Technologies

7,062
RFQ
Datasheet - Module Bulk Obsolete Standard 1600 V 260A - Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 1600 V - - - Chassis Mount BG-PB50ND-1 -40°C ~ 135°C
ND171N14KHPSA1

ND171N14KHPSA1

DIODE GEN PURP 1.4KV 104A PB34-1

Infineon Technologies

6,214
RFQ
Datasheet - Module Bulk Obsolete Standard 1400 V 104A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1400 V - - - Chassis Mount BG-PB34-1 -40°C ~ 135°C
D121N20BXPSA1

D121N20BXPSA1

DIODE GEN PURP 2KV 230A

Infineon Technologies

7,886
RFQ
Datasheet - DO-205AA, DO-8, Stud Bulk Obsolete Standard 2000 V 230A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 2000 V - - - Stud Mount - -40°C ~ 180°C
D255N04BXPSA1

D255N04BXPSA1

DIODE GEN PURP 400V 255A

Infineon Technologies

2,790
RFQ
Datasheet - DO-205AA, DO-8, Stud Bulk Obsolete Standard 400 V 255A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 400 V - - - Stud Mount - -40°C ~ 180°C
CDS5711UR-1

CDS5711UR-1

DIODE SCHOTTKY DO-213AA

Microchip Technology

23
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JANTX1N6663

JANTX1N6663

DIODE GEN PURP 600V 500MA DO35

Microchip Technology

2
RFQ
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 600 V 500mA 1 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 nA @ 600 V - Military MIL-PRF-19500/587 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N6779

JANTX1N6779

DIODE GEN PURP 600V 15A TO257

Microchip Technology

17
RFQ

-

- TO-257-3 Bulk Active Standard 600 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 480 V 300pF @ 5V, 1MHz Military MIL-PRF-19500/647 Through Hole TO-257 150°C (Max)
DD800S17HA_B2

DD800S17HA_B2

RECTIFIER DIODE MODULE

Infineon Technologies

18
RFQ
Datasheet * - Bulk Active - - - - - - - - - - - - -
DD400S17K4C

DD400S17K4C

RECTIFIER DIODE MODULE

Infineon Technologies

21
RFQ

-

* - Bulk Active - - - - - - - - - - - - -
JAN1N3174

JAN1N3174

DIODE GP 1KV 300A DO205AB DO9

Microchip Technology

3
RFQ
Datasheet - DO-205AB, DO-9, Stud Bulk Active Standard 1000 V 300A 1.55 V @ 940 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 1000 V - Military MIL-PRF-19500/211 Chassis, Stud Mount DO-205AB (DO-9) -65°C ~ 200°C
HBL2080RP

HBL2080RP

SINGLE CHANNEL 80V ESD PROTECTOR

onsemi

4,291
RFQ

-

* - Tray Active - - - - - - - - - - - - -
64440211AA

64440211AA

INTAPAK BRIDGE BARRIER VS-644402

Vishay

532
RFQ

-

- - Box Active - - - - - - - - - - - - -
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