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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RB208RSM10STFTL1 100V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	5,064	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	15A	850 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5.2 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
RB218RSM15STFTL1 150V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	3,776	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	150 V	20A	900 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8.3 µA @ 150 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
RB208RSM15STFTL1 150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	4,298	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	150 V	15A	880 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8.3 µA @ 150 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
SCS304AMC7G DIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor	8,300	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
STBR3012L2Y-TR AUTOMOTIVE HIGH VOLTAGE RECTIFIE STMicroelectronics	3,046	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	1600 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1.6 kV	-	Automotive	AEC-Q101	Surface Mount	HU3PAK	-40°C ~ 175°C
SCS304AGC16 DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor	2,519	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
SCS306AMC7G DIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor	5,601	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS306AGC16 DIODE SIL CARB 650V 6A TO220ACP Rohm Semiconductor	6,950	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
SCS308AMC7G DIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor	5,102	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS308AGC16 DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor	9,940	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
JAN1N4247 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	14	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
SCS312AMC7G DIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor	8,395	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS312AGC16 DIODE SIL CARB 650V 12A TO220ACP Rohm Semiconductor	2,156	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
SCS315AMC7G DIODE SIL CARB 650V 15A TO220FM Rohm Semiconductor	5,508	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C
SCS315AGC16 DIODE SIL CARB 650V 15A TO220ACP Rohm Semiconductor	3,256	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
JANTX1N5617US DIODE GEN PURP 400V 1A D-5A Microchip Technology	2,292	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 µA @ 400 V	35pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Surface Mount	D-5A	-65°C ~ 175°C
JANTX1N5615US DIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology	7,427	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Military	MIL-PRF-19500/429	Surface Mount	A, SQ-MELF	-65°C ~ 175°C
JAN1N6623US DIODE GEN PURP 880V 1A D-5A Microchip Technology	2,256	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
DZ950N44KHPSA1 DIODE GEN PURP 4.4KV 950A MODULE Infineon Technologies	1	RFQ	Datasheet	-	Module	Tray	Active	Standard	4400 V	950A	1.78 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4400 V	-	-	-	Chassis Mount	Module	-40°C ~ 150°C
1N4148_T26R DIODE GEN PURP 100V 200MA DO35 onsemi	8,009	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Obsolete	Standard	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	-	-	Through Hole	DO-35	-55°C ~ 175°C

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