Single Diodes

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
RFN20TB4SNZC9

RFN20TB4SNZC9

DIODE GEN PURP 430V 20A TO220NFM

Rohm Semiconductor

68
RFQ
Datasheet - TO-220-2 Full Pack Tube Active Standard 430 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 430 V - - - Through Hole TO-220NFM 150°C
MSC010SDA070K

MSC010SDA070K

DIODE SIL CARB 700V 10A TO220-2

Microchip Technology

55
RFQ
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-220-2 -
STPSC8065D

STPSC8065D

DIODE SIL CARB 650V 8A TO220AC

STMicroelectronics

45
RFQ
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.45 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 105 µA @ 650 V 540pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STBR3008WY

STBR3008WY

DIODE GEN PURP 800V 30A DO247

STMicroelectronics

75
RFQ
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 800 V 30A 1.1 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 800 V - Automotive AEC-Q101 Through Hole DO-247 -40°C ~ 175°C
STTH60R04W

STTH60R04W

DIODE GEN PURP 400V 60A DO247

STMicroelectronics

32
RFQ
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 400 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 60 µA @ 400 V - - - Through Hole DO-247 -40°C ~ 175°C
STTH60L06W

STTH60L06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

84
RFQ
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A 1.55 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 50 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
JANTX1N6638

JANTX1N6638

DIODE GEN PURP 125V 300MA D5B

Microchip Technology

80
RFQ
Datasheet - D, Axial Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 125 V - Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
JANTX1N5418

JANTX1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

75
RFQ
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5550

JANTX1N5550

DIODE GEN PURP 200V 5A AXIAL

Microchip Technology

83
RFQ
Datasheet - B, Axial Bulk Active Standard 200 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5553

JANTX1N5553

DIODE GEN PURP 800V 5A AXIAL

Microchip Technology

91
RFQ
Datasheet - B, Axial Bulk Active Standard 800 V 5A 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 800 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
APT100D60B2G

APT100D60B2G

DIODE GEN PURP 600V 100A TO247

Microchip Technology

46
RFQ
Datasheet - TO-247-2 Tube Active Standard 600 V 100A - - - - - - - Through Hole TO-247 -
MSC020SDA120B

MSC020SDA120B

DIODE SIL CARB 1.2KV 49A TO247

Microchip Technology

37
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 49A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1130pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
MSC050SDA070B

MSC050SDA070B

DIODE SIL CARBIDE 700V 50A TO247

Microchip Technology

59
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 50A 1.5 V @ 50 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
1N6621US

1N6621US

DIODE GEN PURP 440V 1.2A A-MELF

Microchip Technology

38
RFQ
Datasheet - SQ-MELF, A Bulk Active Standard 440 V 1.2A 1.4 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 500 nA @ 440 V 10pF @ 10V, 1MHz - - Surface Mount A-MELF -65°C ~ 150°C
MSC030SDA120BCT

MSC030SDA120BCT

DIODE SIL CARB 1.2KV 65A TO247-3

Microchip Technology

24
RFQ
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 65A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 141pF @ 400V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
UES1306

UES1306

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

45
RFQ
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 400 V - - - Through Hole B, Axial -55°C ~ 150°C
MSC030SDA170B

MSC030SDA170B

DIODE SIL CARB 1.7KV 82A TO247

Microchip Technology

44
RFQ
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 82A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1700 V 2070pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
APTDF500U40G

APTDF500U40G

DIODE GEN PURP 400V 500A LP4

Microchip Technology

10
RFQ
Datasheet - LP4 Bulk Active Standard 400 V 500A 1.5 V @ 500 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 2.5 mA @ 400 V - - - Chassis Mount LP4 -
DZ435N40KHPSA1

DZ435N40KHPSA1

DIODE GEN PURP 4KV 700A MODULE

Infineon Technologies

4
RFQ
Datasheet - Module Tray Active Standard 4000 V 700A 1.71 V @ 1200 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 4000 V - - - Chassis Mount Module -40°C ~ 150°C
65DN06B02ELEMXPSA1

65DN06B02ELEMXPSA1

DIODE GP 600V 15130A D-ELEM-1

Infineon Technologies

19
RFQ
Datasheet - DO-200AC, K-PUK Bulk Active Standard 600 V 15130A 890 mV @ 8000 A Standard Recovery >500ns, > 200mA (Io) - 100 mA @ 600 V - - - Clamp On BG-D-ELEM-1 180°C (Max)
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