Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RF505BM6SFHTL DIODE GEN PURP 600V 5A TO252 Rohm Semiconductor	42	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	150°C (Max)
DTH810D DIODE GEN PURP 1KV 8A TO220AC Diodes Incorporated	98	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	8A	2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	5 µA @ 1000 V	40pF @ 4V, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 150°C
DTH1206D DIODE GEN PURP 600V 12A TO220AC Diodes Incorporated	40	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	12A	2.9 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	45 µA @ 600 V	-	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 150°C
DTH8L06FP DIODE GEN PURP 600V 8A ITO220AC Diodes Incorporated	80	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	8 µA @ 600 V	-	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 150°C
DTH8S06FP DIODE GEN PURP 600V 8A ITO220AC Diodes Incorporated	79	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	3.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	50pF @ 10V, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 150°C
DTH8R06FP DIODE GEN PURP 600V 8A ITO220AC Diodes Incorporated	50	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	50pF @ 10V, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 150°C
DTH8E06FP DIODE GEN PURP 600V 8A ITO220AC Diodes Incorporated	43	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	8A	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
STTH15RQ06GY-TR DIODE GEN PURP 600V 15A D2PAK STMicroelectronics	29	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	15A	2.95 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	20 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
FFSP0865B DIODE SIL CARB 650V 10.1A TO220 onsemi	61	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10.1A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
APT30D30BG DIODE GP 300V 30A TO247 Microchip Technology	44	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	300 V	30A	1.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	250 µA @ 300 V	-	-	-	Through Hole	TO-247 [B]	-55°C ~ 175°C
IDH06SG60CXKSA2 DIODE SIL CARB 600V 6A TO220-2-1 Infineon Technologies	37	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	6A	2.3 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
DSC02120 DIODE SIL CARB 1.2KV 2A TO220AC Diodes Incorporated	85	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	128 µA @ 1200 V	130pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
1N5818-1 DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	91	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 150°C
1N5616US DIODE GEN PURP 400V 1A D-5A Microchip Technology	92	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
DSC05120 DIODE SIL CARB 1.2KV 5A TO220AC Diodes Incorporated	50	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	310pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
SCS212AJHRTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	40	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
1N5553US DIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology	40	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	800 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 800 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
DSC10120 DIODE SIL CARB 1.2KV 10A TO220AC Diodes Incorporated	42	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	640 µA @ 1200 V	611pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
MSC030SDA120S DIODE SIL CARB 1.2KV 30A D3PAK Microchip Technology	84	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Surface Mount	D3PAK	-
UES1002 DIODE GEN PURP 100V 1A AXIAL Microchip Technology	99	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	100 V	1A	975 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	-	-	-	Through Hole	A, Axial	-55°C ~ 175°C

Total 14609 Record«Prev 1... 238 239 240 241242243 244 245...731 Next»

leon@xmagelec.com