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Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPS20L15D DIODE SCHOTTKY 15V 20A TO220AC STMicroelectronics	75	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	15 V	20A	410 mV @ 19 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 15 V	-	-	-	Through Hole	TO-220AC	125°C (Max)
1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	91	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
IDP30E120XKSA1 DIODE GP 1.2KV 50A TO220-2-2 Infineon Technologies	62	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	50A	2.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	243 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
IDH08G65C6XKSA1 DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies	36	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
STTH1512PI DIODE GEN PURP 1.2KV 15A DOP3I STMicroelectronics	75	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	1200 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	15 µA @ 1200 V	-	-	-	Through Hole	DOP3I	175°C (Max)
IDH12G65C6XKSA1 DIODE SIL CARB 650V 27A TO220-2 Infineon Technologies	74	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 420 V	594pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
JANTX1N5620 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	47	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5551 DIODE GEN PURP 400V 5A AXIAL Microchip Technology	83	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
1N5711 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	87	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
JANTX1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	68	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
1N5618US DIODE GEN PURP 600V 1A D-5A Microchip Technology	35	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
1N5420 DIODE GEN PURP 600V 3A B AXIAL Microchip Technology	70	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N6640US DIODE GEN PURP 50V 300MA D-5D Microchip Technology	49	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Surface Mount	D-5D	-65°C ~ 175°C
MSC010SDA170B DIODE SIL CARB 1.7KV 31A TO247-3 Microchip Technology	47	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	31A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1700 V	820pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
1N5802US DIODE GEN PURP 50V 1A D-5A Microchip Technology	50	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	50 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
MSC050SDA070S DIODE SIL CARBIDE 700V 88A D3PAK Microchip Technology	16	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	88A	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	2034pF @ 1V, 1MHz	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
JANTX1N5420US DIODE GEN PURP 600V 3A D-5B Microchip Technology	49	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
MSC050SDA120B DIODE SIC 1.2KV 109A TO247-2 Microchip Technology	73	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	109A	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	246pF @ 400V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC050SDA120S DIODE SIL CARB 1.2KV 50A D3PAK Microchip Technology	85	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	50A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Surface Mount	D3PAK	-
UES1106 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	100	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	-	-	-	Through Hole	A, Axial	-55°C ~ 150°C

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