FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SCT040H120G3AG

SCT040H120G3AG

H2PAK-7

STMicroelectronics

2,115
RFQ
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 15V, 18V 54mOhm @ 16A, 18V 4.2V @ 5mA 54 nC @ 18 V +18V, -5V 1329 pF @ 800 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCT040HU120G3AG

SCT040HU120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

5,288
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCTWA40N12G24AG

SCTWA40N12G24AG

TO247-4

STMicroelectronics

9,812
RFQ
Datasheet - TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 33A (Tc) 18V 105mOhm @ 20A, 18V 5V @ 1mA 63 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 290W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
IPQC60T010S7XTMA1

IPQC60T010S7XTMA1

HIGH POWER_NEW

Infineon Technologies

7,182
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-101
SCT025H120G3-7

SCT025H120G3-7

SILICON CARBIDE POWER MOSFET 120

STMicroelectronics

8,556
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPDQ60T010S7XTMA1

IPDQ60T010S7XTMA1

HIGH POWER_NEW

Infineon Technologies

4,509
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
AIMCQ120R020M1TXTMA1

AIMCQ120R020M1TXTMA1

SIC_DISCRETE

Infineon Technologies

2,840
RFQ

-

CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 116A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +25V, -10V 2667 pF @ 800 V - 577W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T010S7AXTMA1

IPQC60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,673
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-101
IPDQ60T010S7AXTMA1

IPDQ60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,845
RFQ

-

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
SCT020W120G3-4AG

SCT020W120G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

4,205
RFQ
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
SCT020HU120G3AG

SCT020HU120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

6,493
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT012H90G3AG

SCT012H90G3AG

H2PAK-7

STMicroelectronics

9,849
RFQ
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 110A (Tc) 15V, 18V 15.8mOhm @ 60A, 18V 4.2V @ 10mA 138 nC @ 18 V +18V, -5V 3880 pF @ 600 V - 625W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCT016H120G3AG

SCT016H120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

3,768
RFQ
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IXFT150N25X3HV

IXFT150N25X3HV

MOSFET N-CH 250V 150A TO268HV

Littelfuse Inc.

3,294
RFQ
Datasheet HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
DMWSH120H28SM3

DMWSH120H28SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

3,166
RFQ

-

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H28SM4

DMWSH120H28SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

3,947
RFQ

-

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 173.7 nC @ 15 V +19V, -8V 3944 pF @ 1000 V - 429W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H28SM3Q

DMWSH120H28SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

9,774
RFQ

-

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
IMBG65R009M1HXTMA1

IMBG65R009M1HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

2,232
RFQ
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 170A (Tc) 18V 13.6mOhm @ 97.2A, 18V 5.7V @ 32.4mA 176 nC @ 18 V +23V, -5V 6054 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
NVXK2VR40WDT2

NVXK2VR40WDT2

APM32 SIC POWER MODULE

onsemi

7,553
RFQ
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
FF2000XTR17IE5BPSA1

FF2000XTR17IE5BPSA1

PP IHM I

Infineon Technologies

1
RFQ
Datasheet - - Tray Active - - - - - - - - - - - - - - - - -
Total 21581 Record«Prev1... 467468469470471472473474...1080Next»