FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQD020N10NM5CGSCATMA1

IQD020N10NM5CGSCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

5,547
RFQ
Datasheet OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 276A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9-U02
IQD016N08NM5CGSCATMA1

IQD016N08NM5CGSCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

8,445
RFQ
Datasheet OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9-U02
IQD016N08NM5SCATMA1

IQD016N08NM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

7,583
RFQ
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-U02
NVMFS5C406NWFT1G

NVMFS5C406NWFT1G

MOSFET N-CH 40V 52A/353A 5DFN

onsemi

2,581
RFQ
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 353A (Tc) 10V 0.8mOhm @ 50A, 10V 4V @ 280µA 110 nC @ 10 V ±20V 7288 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
IQD063N15NM5SCATMA1

IQD063N15NM5SCATMA1

OPTIMOS POWER MOSFETS 25 V - 150

Infineon Technologies

3,039
RFQ
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14.4A (Ta), 151A (Tc) 8V, 10V 6.32mOhm @ 50A, 10V 4.6V @ 159µA 60 nC @ 10 V ±20V 4700 pF @ 75 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-U02
SGT120R65AL

SGT120R65AL

650 V, 75 MOHM TYP., 15 A, E-MOD

STMicroelectronics

6,377
RFQ
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) 6V 120mOhm @ 5A, 6V 2.6V @ 12mA 3 nC @ 6 V +6V, -10V 125 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (5x6) HV
IPP023N10N5AKSA1

IPP023N10N5AKSA1

MOSFET N-CH 100V 120A TO220-3

Infineon Technologies

4,142
RFQ
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 270µA 210 nC @ 10 V ±20V 15600 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IQFH47N04NM6ATMA1

IQFH47N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

8,789
RFQ
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Ta), 507A (Tc) 6V, 10V 0.47mOhm @ 100A, 10V 2.8V @ 1.05mA 221 nC @ 10 V ±20V 13300 pF @ 20 V - 3W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
NVMFS5C404NLWFET1G

NVMFS5C404NLWFET1G

T6-40V N 0.67 MOHMS LL

onsemi

5,520
RFQ
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 370A (Tc) 4.5V, 10V 0.67mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
IPP051N15N5AKSA1

IPP051N15N5AKSA1

MOSFET N-CH 150V 120A TO220-3

Infineon Technologies

2,758
RFQ
Datasheet OptiMOS™ 5 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 5.1mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 300mW (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IQFH39N04NM6ATMA1

IQFH39N04NM6ATMA1

TRENCH <= 40V

Infineon Technologies

2,674
RFQ
Datasheet OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 63A (Ta), 600A (Tc) 6V, 10V 0.39mOhm @ 100A, 10V 2.8V @ 1.05mA 273 nC @ 10 V ±20V 16400 pF @ 20 V - 3W (Ta), 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

IGLT65R110D2ATMA1

Infineon Technologies

7,608
RFQ
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 15A (Tc) - - 1.6V @ 1.3mA 2.4 nC @ 3 V -10V 170 pF @ 400 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IPP022N12NM6AKSA1

IPP022N12NM6AKSA1

TRENCH >=100V

Infineon Technologies

9,464
RFQ
Datasheet OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 29A (Ta), 203A (Tc) 8V, 10V 2.2mOhm @ 100A, 10V 3.6V @ 275µA 141 nC @ 10 V ±20V 11000 pF @ 60 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
AUIRF7799L2TR

AUIRF7799L2TR

MOSFET N-CH 250V 375A DIRECTFET

Infineon Technologies

6,719
RFQ
Datasheet HEXFET® DirectFET™ Isometric L8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 375A (Tc) 10V 38mOhm @ 21A, 10V 5V @ 250µA 165 nC @ 10 V ±30V 6714 pF @ 25 V - 4.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric L8
IMBG65R040M2HXTMA1

IMBG65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,236
RFQ
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 49A (Tc) 15V, 20V 49mOhm @ 22.9A, 18V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPQC60R040S7XTMA1

IPQC60R040S7XTMA1

MOSFET

Infineon Technologies

6,559
RFQ
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IMW65R060M2HXKSA1

IMW65R060M2HXKSA1

IMW65R060M2HXKSA1

Infineon Technologies

2,932
RFQ
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 32.8A (Tc) 15V, 20V 55mOhm @ 15.4A, 20V 5.6V @ 3.1mA 19 nC @ 18 V +23V, -7V 669 pF @ 400 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IPZA60R045P7XKSA1

IPZA60R045P7XKSA1

MOSFET N-CH 650V 61A TO247-4-3

Infineon Technologies

8,983
RFQ
Datasheet CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 61A (Tc) 10V 45mOhm @ 22.5A, 10V 4V @ 1.08mA 90 nC @ 10 V ±20V 3891 pF @ 400 V - 201W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-3
GS61008P-MR

GS61008P-MR

GS61008P-MR

Infineon Technologies Canada Inc.

3,880
RFQ

-

- 5-SMD, No Lead Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100 V 90A (Tc) 6V 9.5mOhm @ 27A, 6V 2.6V @ 7mA 8 nC @ 6 V +7V, -10V 600 pF @ 50 V - - -55°C ~ 150°C - - Surface Mount -
IMW65R040M2HXKSA1

IMW65R040M2HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

8
RFQ
Datasheet CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 20V 36mOhm @ 22.9A, 20V 5.6V @ 4.6mA 28 nC @ 18 V +23V, -7V 997 pF @ 400 V - 172W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
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